专利内容由知识产权出版社提供
专利名称：Process for forming gate conductors发明人：Bin Yu申请号：US09597624申请日：20000620公开号：US06391753B1公开日：20020521
专利附图：
摘要：An ultra-large-scale integrated (ULSI) circuit includes MOSFETs. The MOSFETscan include a gate structure manufactured by utilizing a spacer structure as a mask. Thespacer structure can be silicon dioxide formed in an etch back process.
申请人：ADVANCED MICRO DEVICES, INC.
代理机构：Foley & Lardner
更多信息请下载全文后查看
