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专利名称：ADJUSTABLE FIELD EFFECT RECTIFIER发明人：ANKOUDINOV, Alexei,RODOV, Vladimir申请号：EP08833488.3申请日：20080925公开号：EP2232559B1公开日：20190515
摘要：There is provided an adjustable field effect rectifier comprising an epitaxial layer(420) of a first conductivity with a drain formed on one side of the epitaxial layer (420), apair of wells (430) of a second conductivity, opposite to the first conductivity, spacedapart from one another, formed in the epitaxial layer (420) opposite the drain, a gatearea (405) formed atop the epitaxial layer (420) opposite the drain, an opening (410)through the gate area (405), and a layer (440) of the first conductivity formed in theepitaxial layer (420) under the opening (410) shorted to the gate and the pair of wells,said layer (440) is configured to decrease a resistance of a top layer within the epitaxiallayer (420) between the pair of wells (430) and the layer (440).
申请人：ST MICROELECTRONICS NV
地址：NL
国籍：NL
代理机构：Style, Kelda Camilla Karen
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