Method of making a semiconductor device

专利名称：Method of making a semiconductor device发明人：Toshio Nagata申请号：US09945756申请日：20010905公开号：US06399494B1公开日：20020604

专利附图：

摘要：A method of making a semiconductor device comprises forming a gateelectrode on a semiconductor substrate, forming a diffusion layer in the semiconductorsubstrate, forming a first SiO2 film on a bottom surface of the semiconductor substrateand second SiO2 film on an upper surface of the semiconductor substrate, removing the

second SiO2 film, forming a CoSi2 film on the diffusion, and removing an undesired cobaltfrom the first SiO2 film.

申请人：OKI ELECTRIC INDUSTRY CO., LTD.

代理机构：Kanesaka & Takeuchi

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