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专利名称：Methods of forming transistors发明人：David H. Wells申请号：US11704466申请日：20070207公开号：US079322B2公开日：20110802
专利附图：
摘要：Some embodiments include methods of forming voids within semiconductorconstructions. In some embodiments the voids may be utilized as microstructures fordistributing coolant, for guiding electromagnetic radiation, or for separation and/orcharacterization of materials. Some embodiments include constructions having micro-
structures therein which correspond to voids, conduits, insulative structures,semiconductor structures or conductive structures.
申请人：David H. Wells
地址：Boise ID US
国籍：US
代理机构：Wells St. John P.S.
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