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专利名称：METHOD FOR MANUFACTURING A MULTI-LEVEL INTERCONNECT STRUCTURE
发明人：HORAK, David, Vaclav,KOBURGER, Charles,
William,MITCHELL, Peter,NESBIT, Larry, Alan
申请号：EP04731043.8申请日：20040504公开号：EP1625617A1公开日：20060215
摘要：A method for forming interlevel dielectric layers in multilevel interconnectstructures using air as the constituent low-k dielectric material that is compatible withdamascene processes without introducing additional process steps. The conductivefeatures characteristic of the damascene process are formed by standard lithographicand etch processes in the sacrificial mandrel material (22,30) for each level of theinterconnect structure. The conductive features (28',32',34') in each level are surroundedby the mandrel material. After all levels of the interconnect structure are formed, apassageway (62) is provided to the mandrel material. An isotropic etchant is introducedthrough the passageway that selectively etches and removes the mandrel material. Thespaces formerly occupied by the mandrel material in the levels of the interconnectstructure are filled by air, which operates as a low-k dielectric material.
申请人：International Business Machines Corporation
地址：New Orchard Road Armonk, N.Y. 10504 US
国籍：US
代理机构：Williams, Julian David
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