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专利名称：Anti-reflective coatings and methods for
forming and using same
发明人：Zhiping Yin,Gurtej Sandhu申请号：US09939409申请日：20010824公开号：US06541843B2公开日：20030401
专利附图：
摘要：An anti-reflective coating material layer is provided that has a relatively highetch rate such that it can be removed simultaneously with the cleaning of a definedopening in a relatively short period of time without affecting the critical dimensions of
the opening. A method of forming such a layer includes providing a substrate assemblysurface and using a gas mixture of at least a silicon containing precursor, a nitrogencontaining precursor, and an oxygen containing precursor. The layer is formed at atemperature in the range of about 50° C. to about 600° C. Generally, the anti-reflectivecoating material layer deposited is SiON:H, where x is in the range of about 0.39 to about0.65, y is in the range of about 0.02 to about 0.56, z is in the range of about 0.05 to about0.33, and where the atomic percentage of hydrogen in the inorganic anti-reflectivecoating material layer is in the range of about 10 atomic percent to about 40 atomicpercent. The total SiHflow is generally in the range of about 80 sccm to about 400 sccm.The gas mixture may include SiHand NO, where the ratio of SiH:NO is in the range ofabout 0.25 to 0.60. The inorganic anti-reflective coating material layer may be used fordefining contact openings, openings for forming capacitor structures, or any otheropenings in oxide layers.
申请人：MICRON TECHNOLOGY, INC.
代理机构：Mueting, Raasch & Gebhardt, P.A.
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