16M-BIT
SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
Publication Release Date: March 13, 2009
- 1 - Preliminary - Revision B
W25Q16BV
Table of Contents
1. 2. 3. 4. 5. 6. 7.
GENERAL DESCRIPTION...............................................................................................................5 FEATURES.......................................................................................................................................5 PIN CONFIGURATION SOIC 150 / 208-MIL...................................................................................6 PAD CONFIGURATION WSON 6X5-MM........................................................................................6 PIN DESCRIPTION SOIC 150/208-MIL, AND WSON 6X5-MM......................................................6 PIN CONFIGURATION SOIC 300-MIL............................................................................................7 PIN DESCRIPTION SOIC 300-MIL..................................................................................................7 7.1 7.2 7.3 7.4 7.5 7.6
Package Types.....................................................................................................................8 Chip Select (/CS)..................................................................................................................8 Serial Data Input, Output and IOs (DI, DO and IO0, IO1, IO2, IO3)....................................8 Write Protect (/WP)...............................................................................................................8 HOLD (/HOLD).....................................................................................................................8 Serial Clock (CLK)................................................................................................................8
8. 9.
BLOCK DIAGRAM............................................................................................................................9 FUNCTIONAL DESCRIPTION.......................................................................................................10 9.1
SPI OPERATIONS.............................................................................................................10
9.1.1 9.1.2 9.1.3 9.1.4
Standard SPI Instructions.....................................................................................................10 Dual SPI Instructions............................................................................................................10 Quad SPI Instructions...........................................................................................................10 Hold Function.......................................................................................................................10 Write Protect Features..........................................................................................................11
9.2 10.
WRITE PROTECTION.......................................................................................................11
9.2.1
CONTROL AND STATUS REGISTERS........................................................................................12 10.1
STATUS REGISTER..........................................................................................................12
10.1.1 10.1.2 10.1.3 10.1.4 10.1.5 10.1.6 10.1.7 10.1.8 10.1.9
BUSY..................................................................................................................................12 Write Enable Latch (WEL)..................................................................................................12 Block Protect Bits (BP2, BP1, BP0)....................................................................................12 Top/Bottom Block Protect (TB)...........................................................................................12 Sector/Block Protect (SEC)................................................................................................12 Status Register Protect (SRP1, SRP0)...............................................................................13 Erase Suspend Status (SUS).............................................................................................13 Quad Enable (QE)..............................................................................................................13 Status Register Memory Protection....................................................................................15 Manufacturer and Device Identification..............................................................................16 Instruction Set Table 1 (Erase, Program Instructions)........................................................17
10.2 INSTRUCTIONS.................................................................................................................16
10.2.1 10.2.2
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W25Q16BV
10.2.3 10.2.4 10.2.5 10.2.6 10.2.7 10.2.8 10.2.9 10.2.10 10.2.11 10.2.12 10.2.13 10.2.14 10.2.15 10.2.16 10.2.17 10.2.18 10.2.19 10.2.20 10.2.21 10.2.22 10.2.23 10.2.24 10.2.25 10.2.26 10.2.27 10.2.28 10.2.29 10.2.30 10.2.31 10.2.32
Instruction Set Table 2 (Read Instructions)........................................................................18 Instruction Set Table 3 (ID, Security Instructions)...............................................................19 Write Enable (06h)..............................................................................................................20 Write Disable (04h).............................................................................................................20 Read Status Register-1 (05h) and Read Status Register-2 (35h).......................................21 Write Status Register (01h)................................................................................................22 Read Data (03h).................................................................................................................23 Fast Read (0Bh)...............................................................................................................24 Fast Read Dual Output (3Bh)...........................................................................................25 Fast Read Quad Output (6Bh)..........................................................................................26 Fast Read Dual I/O (BBh).................................................................................................27 Fast Read Quad I/O (EBh)...............................................................................................29 Word Read Quad I/O (E7h)..............................................................................................31 Octal Word Read Quad I/O (E3h).....................................................................................33 Page Program (02h).........................................................................................................35 Quad Input Page Program (32h)......................................................................................36 Sector Erase (20h)...........................................................................................................37 32KB Block Erase (52h)...................................................................................................38 KB Block Erase (D8h)...................................................................................................39 Chip Erase (C7h / 60h).....................................................................................................40 Erase Suspend (75h)........................................................................................................41 Erase Resume (7Ah)........................................................................................................41 Power-down (B9h)............................................................................................................42 Release Power-down / Device ID (ABh)...........................................................................43 Read Manufacturer / Device ID (90h)...............................................................................45 Read Manufacturer / Device ID Dual I/O (92h).................................................................46 Read Manufacturer / Device ID Quad I/O (94h)................................................................47 Read Unique ID Number (4Bh).........................................................................................48 Read JEDEC ID (9Fh)......................................................................................................49 Continuous Read Mode Reset (FFh or FFFFh)................................................................50
11. ELECTRICAL CHARACTERISTICS..............................................................................................51 11.1 11.2 11.3 11.4 11.5 11.6 11.7 11.8
Absolute Maximum Ratings................................................................................................51 Operating Ranges..............................................................................................................51 Power-up Timing and Write Inhibit Threshold....................................................................52 DC Electrical Characteristics..............................................................................................53 AC Measurement Conditions.............................................................................................54 AC Electrical Characteristics..............................................................................................55 AC Electrical Characteristics (cont’d).................................................................................56 Serial Output Timing...........................................................................................................57
Publication Release Date: March 13, 2009
- 3 - Preliminary - Revision B
W25Q16BV
11.9 12.
Input Timing........................................................................................................................57
11.10 Hold Timing.......................................................................................................................57 PACKAGE SPECIFICATION..........................................................................................................58 12.1 12.2 12.3 12.4 13. 14.
13.1
8-Pin SOIC 150-mil (Package Code SN)...........................................................................58 8-Pin SOIC 208-mil (Package Code SS)...........................................................................59 8-Contact 6x5mm WSON (Package Code ZP)..................................................................60 16-Pin SOIC 300-mil (Package Code SF)..........................................................................62 Valid Part Numbers and Top Side Marking........................................................................
ORDERING INFORMATION..........................................................................................................63 REVISION HISTORY......................................................................................................................65
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W25Q16BV
1. GENERAL DESCRIPTION
The W25Q16BV (16M-bit) Serial Flash memory provides a storage solution for systems with limited space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) and storing voice, text and data. The devices operate on a single 2.7V to 3.6V power supply with current consumption as low as 4mA active and 1µA for power-down. All devices are offered in space-saving packages.
The W25Q16BV array is organized into 8,192 programmable pages of 256-bytes each. Up to 256 bytes can be programmed at a time. Pages can be erased in groups of 16 (sector erase), groups of 128 (32KB block erase), groups of 256 (KB block erase) or the entire chip (chip erase). The W25Q16BV has 512 erasable sectors and 32 erasable blocks respectively. The small 4KB sectors allow for greater flexibility in applications that require data and parameter storage. (See figure 2.)
The W25Q16BV supports the standard Serial Peripheral Interface (SPI), and a high performance Dual/Quad output as well as Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1 (DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies of up to 104MHz are supported allowing equivalent clock rates of 208MHz for Dual Output and 416MHz for Quad Output when using the Fast Read Dual/Quad Output instructions. These transfer rates can outperform standard Asynchronous 8 and 16-bit Parallel Flash memories. The Continuous Read Mode allows for efficient memory access with as few as 8-clocks of instruction-overhead to read a 24-bit address, allowing true XIP (execute in place) operation.
A Hold pin, Write Protect pin and programmable write protection, with top or bottom array control, provide further control flexibility. Additionally, the device supports JEDEC standard manufacturer and device identification with a -bit Unique Serial Number.
2. FEATURES
Family of SpiFlash Memories
– W25Q16BV: 16M-bit / 2M-byte (2,097,152) – 256-bytes per programmable page
Standard, Dual or Quad SPI
– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold – Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold – Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3 Highest Performance Serial Flash – Up to 8X that of ordinary Serial Flash – 104MHz clock operation
– 208MHz equivalent Dual SPI – 416MHz equivalent Quad SPI
– 50MB/S continuous data transfer rate Efficient “Continuous Read Mode” – Low Instruction overhead
– As few as 8 clocks to address memory
– Allows true XIP (execute in place) operation – Outperforms X16 Parallel Flash
Note 1: Refer to Ordering Information
Low Power, Wide Temperature Range – Single 2.7 to 3.6V supply
– 4mA active current, <1µA Power-down (typ.) – -40°C to +85°C operating range Flexible Architecture with 4KB sectors – Uniform Sector Erase (4K-bytes) – Block Erase (32K and K-bytes) – Program one to 256 bytes
– More than 100,000 erase/write cycles – More than 20-year data retention Advanced Security Features
– Software and Hardware Write-Protect – Top or Bottom, Sector or Block selection – Lock-Down and OTP protection(1) – -Bit Unique ID for each device Space Efficient Packaging – 8-pin SOIC 150/208-mil – 8-pad WSON 6x5-mm – 16-pin SOIC 300-mil
– Contact Winbond for KGD and CSP options
Publication Release Date: March 13, 2009
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W25Q16BV
3. PIN CONFIGURATION SOIC 150 / 208-MIL
Figure 1a. W25Q16BV Pin Assignments, 8-pin SOIC 150 / 208-mil (Package Code SN & SS)
4. PAD CONFIGURATION WSON 6X5-MM
Figure 1b. W25Q16BV Pad Assignments, 8-pad WSON 6x5-mm(Package Code ZP)
5. PIN DESCRIPTION SOIC 150/208-MIL, AND WSON 6X5-MM
PIN NO.
2
PIN NAME
DO (IO1)
I/O
I I/O I/O I/O I I/O
Chip Select Input
FUNCTION
Data Output (Data Input Output 1)*1 Write Protect Input ( Data Input Output 2)*2 Data Input (Data Input Output 0)*1 Serial Clock Input
Hold Input (Data Input Output 3)*2
1 /CS
3 /WP (IO2) 5 6
DI (IO0) CLK
4 GND Ground
7 /HOLD (IO3)
8 VCC Power Supply
*1 IO0 and IO1 are used for Standard and Dual SPI instructions *2 IO0 – IO3 are used for Quad SPI instructions
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W25Q16BV
6. PIN CONFIGURATION SOIC 300-MIL
Figure 1c. W25Q16BV Pin Assignments, 16-pin SOIC 300-mil (Package Code SF)
7. PIN DESCRIPTION SOIC 300-MIL
PAD NO.
PAD NAME
I/O
I/O
FUNCTION
Hold Input (Data Input Output 3)*2
1 /HOLD (IO3)
2 VCC Power Supply 3 N/C No Connect 4 N/C No Connect 5 N/C No Connect 6 N/C No Connect 7 /CS 8
DO (IO1)
9 /WP (IO2)
I I/O I/O
Chip Select Input
Data Output (Data Input Output 1)*1 Write Protect Input (Data Input Output 2)*2
10 GND Ground 11 N/C No Connect 12 N/C No Connect 13 N/C No Connect 14 N/C No Connect 15 16
DI (IO0) CLK
I/O I
Data Input (Data Input Output 0)*1 Serial Clock Input
*1 IO0 and IO1 are used for Standard and Dual SPI instructions *2 IO0 – IO3 are used for Quad SPI instructions
Publication Release Date: March 13, 2009
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W25Q16BV
7.1 Package Types
W25Q16BV is offered in an 8-pin plastic 150-mil or 208-mil width SOIC (package code SN & SS) and 6x5-mm WSON (package code ZP) as shown in figure 1a, and 1b, respectively. The W25Q16BV is also offered in a 16-pin plastic 300-mil width SOIC (package code SF) as shown in figure 1c. Package diagrams and dimensions are illustrated at the end of this datasheet.
7.2 Chip Select (/CS)
The SPI Chip Select (/CS) pin enables and disables device operation. When /CS is high the device is deselected and the Serial Data Output (DO, or IO0, IO1, IO2, IO3) pins are at high impedance. When deselected, the devices power consumption will be at standby levels unless an internal erase, program or status register cycle is in progress. When /CS is brought low the device will be selected, power consumption will increase to active levels and instructions can be written to and data read from the device. After power-up, /CS must transition from high to low before a new instruction will be accepted. The /CS input must track the VCC supply level at power-up (see “Write Protection” and figure 32). If needed a pull-up resister on /CS can be used to accomplish this.
7.3 Serial Data Input, Output and IOs (DI, DO and IO0, IO1, IO2, IO3)
The W25Q16BV supports standard SPI, Dual SPI and Quad SPI operation. Standard SPI instructions use the unidirectional DI (input) pin to serially write instructions, addresses or data to the device on the rising edge of the Serial Clock (CLK) input pin. Standard SPI also uses the unidirectional DO (output) to read data or status from the device on the falling edge CLK.
Dual and Quad SPI instruction use the bidirectional IO pins to serially write instructions, addresses or data to the device on the rising edge of CLK and read data or status from the device on the falling edge of CLK. Quad SPI instructions require the non-volatile Quad Enable bit (QE) in Status Register-2 to be set. When QE=1 the /WP pin becomes IO2 and /HOLD pin becomes IO3.
7.4 Write Protect (/WP)
The Write Protect (/WP) pin can be used to prevent the Status Register from being written. Used in conjunction with the Status Register’s Block Protect (SEC, TB, BP2, BP1 and BP0) bits and Status Register Protect (SRP) bits, a portion or the entire memory array can be hardware protected. The /WP pin is active low. When the QE bit of Status Register-2 is set for Quad I/O, the /WP pin (Hardware Write Protect) function is not available since this pin is used for IO2. See figure 1a, 1b, and 1c for the pin configuration of Quad I/O operation.
7.5 HOLD (/HOLD)
The /HOLD pin allows the device to be paused while it is actively selected. When /HOLD is brought low, while /CS is low, the DO pin will be at high impedance and signals on the DI and CLK pins will be ignored (don’t care). When /HOLD is brought high, device operation can resume. The /HOLD function can be useful when multiple devices are sharing the same SPI signals. The /HOLD pin is active low. When the QE bit of Status Register-2 is set for Quad I/O, the /HOLD pin function is not available since this pin is used for IO3. See figure 1a, 1b, and 1c for the pin configuration of Quad I/O operation.
7.6 Serial Clock (CLK)
The SPI Serial Clock Input (CLK) pin provides the timing for serial input and output operations. (\"See SPI Operations\")
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W25Q16BV
8. BLOCK DIAGRAM
Block SegmentationxxFF00h xxFFFFh•Sector 15 (4KB) •xxF000h xxF0FFhxxEF00h xxEFFFh•Sector 14 (4KB) •xxE000h xxE0FFhxxDF00h xxDFFFh•Sector 13 (4KB) •xxD000h xxD0FFh1FFF00h 1FFFFFh•Block 31 (KB) •1F0000h 1F00FFh••••••xx2F00h xx2FFFh•Sector 2 (4KB) •xx2000h xx20FFhxx1F00h xx1FFFh•Sector 1 (4KB) •xx1000h xx10FFhxx0F00h xx0FFFh•Sector 0 (4KB) •xx0000h xx00FFhWrite Protect Logic and Row Decode0FFF00h 0FFFFFh•Block 15 (KB) •0F0000h 0F00FFh•••08FF00h 08FFFFh•Block 8 (KB) •080000h 0800FFh/WP (IO2)Write ControlLogicStatusRegister07FF00h 07FFFFh•Block 7 (KB) •070000h 0700FFh•••00FF00h 00FFFFh•Block 0 (KB) •000000h 0000FFhHigh VoltageGenerators/HOLD (IO3)CLK/CSSPICommand &Control LogicPage AddressLatch / CounterBeginningPage AddressEndingPage AddressColumn DecodeAnd 256-Byte Page BufferDataDI (IO0)DO (IO1)Byte AddressLatch / CounterW25Q16BV10FF00h 10FFFFh•Block 16 (KB) •100000h 1000FFh Figure 2. W25Q16BV Serial Flash Memory Block Diagram
Publication Release Date: March 13, 2009
- 9 - Preliminary - Revision B
W25Q16BV
9. FUNCTIONAL DESCRIPTION
9.1 SPI OPERATIONS
9.1.1 Standard SPI Instructions
The W25Q16BV is accessed through an SPI compatible bus consisting of four signals: Serial Clock (CLK), Chip Select (/CS), Serial Data Input (DI) and Serial Data Output (DO). Standard SPI instructions use the DI input pin to serially write instructions, addresses or data to the device on the rising edge of CLK. The DO output pin is used to read data or status from the device on the falling edge CLK.
SPI bus operation Modes 0 (0,0) and 3 (1,1) are supported. The primary difference between Mode 0 and Mode 3 concerns the normal state of the CLK signal when the SPI bus master is in standby and data is not being transferred to the Serial Flash. For Mode 0 the CLK signal is normally low on the falling and rising edges of /CS. For Mode 3 the CLK signal is normally high on the falling and rising edges of /CS.
9.1.2 Dual SPI Instructions
The W25Q16BV supports Dual SPI operation when using the “Fast Read Dual Output and Dual I/O” (3B and BB hex) instructions. These instructions allow data to be transferred to or from the device at two to three times the rate of ordinary Serial Flash devices. The Dual Read instructions are ideal for quickly downloading code to RAM upon power-up (code-shadowing) or for executing non-speed-critical code directly from the SPI bus (XIP). When using Dual SPI instructions the DI and DO pins become bidirectional I/O pins: IO0 and IO1.
9.1.3 Quad SPI Instructions
The W25Q16BV supports Quad SPI operation when using the “Fast Read Quad Output”, “Fast Read Quad I/O”, “Word Read Quad I/O” and “Octal Word Quad I/O” (6B, EB, E7 and E3 hex respectively). These instructions allow data to be transferred to or from the device four to six times the rate of ordinary Serial Flash. The Quad Read instructions offer a significant improvement in continuous and random access transfer rates allowing fast code-shadowing to RAM or execution directly from the SPI bus (XIP). When using Quad SPI instructions the DI and DO pins become bidirectional IO0 and IO1, and the /WP and /HOLD pins become IO2 and IO3 respectively. Quad SPI instructions require the non-volatile Quad Enable bit (QE) in Status Register-2 to be set.
9.1.4 Hold Function
The /HOLD signal allows the W25Q16BV operation to be paused while it is actively selected (when /CS is low). The /HOLD function may be useful in cases where the SPI data and clock signals are shared with other devices. For example, consider if the page buffer was only partially written when a priority interrupt requires use of the SPI bus. In this case the /HOLD function can save the state of the instruction and the data in the buffer so programming can resume where it left off once the bus is available again. The /HOLD function is only available for standard SPI and Dual SPI operation, not during Quad SPI.
To initiate a /HOLD condition, the device must be selected with /CS low. A /HOLD condition will activate on the falling edge of the /HOLD signal if the CLK signal is already low. If the CLK is not already low the /HOLD condition will activate after the next falling edge of CLK. The /HOLD condition will terminate on the rising edge of the /HOLD signal if the CLK signal is already low. If the CLK is not already low the /HOLD condition will terminate after the next falling edge of CLK. During a /HOLD condition, the Serial Data Output (DO) is high impedance, and Serial Data Input (DI) and Serial Clock (CLK) are ignored. The Chip Select (/CS) signal should be kept active (low) for the full duration of the /HOLD operation to avoid resetting the internal logic state of the device.
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W25Q16BV
9.2 WRITE PROTECTION
Applications that use non-volatile memory must take into consideration the possibility of noise and other adverse system conditions that may compromise data integrity. To address this concern the W25Q16BV provides several means to protect data from inadvertent writes.
9.2.1 Write Protect Features
Device resets when VCC is below threshold Time delay write disable after Power-up
Write enable/disable instructions and automatic write disable after program and erase Software and Hardware (/WP pin) write protection using Status Register Write Protection using Power-down instruction Lock Down write protection until next power-up(1) One Time Program (OTP) write protection(1)
Note 1: These features are available upon special order. Please refer to Ordering Information.
Upon power-up or at power-down, the W25Q16BV will maintain a reset condition while VCC is below the threshold value of VWI, (See Power-up Timing and Voltage Levels and Figure 32). While reset, all operations are disabled and no instructions are recognized. During power-up and after the VCC voltage exceeds VWI, all program and erase related instructions are further disabled for a time delay of tPUW. This includes the Write Enable, Page Program, Sector Erase, Block Erase, Chip Erase and the Write Status Register instructions. Note that the chip select pin (/CS) must track the VCC supply level at power-up until the VCC-min level and tVSL time delay is reached. If needed a pull-up resister on /CS can be used to accomplish this.
After power-up the device is automatically placed in a write-disabled state with the Status Register Write Enable Latch (WEL) set to a 0. A Write Enable instruction must be issued before a Page Program, Sector Erase, Chip Erase or Write Status Register instruction will be accepted. After completing a program, erase or write instruction the Write Enable Latch (WEL) is automatically cleared to a write-disabled state of 0.
Software controlled write protection is facilitated using the Write Status Register instruction and setting the Status Register Protect (SRP0, SRP1) and Block Protect (SEC,TB, BP2, BP1 and BP0) bits. These settings allow a portion or all of the memory to be configured as read only. Used in conjunction with the Write Protect (/WP) pin, changes to the Status Register can be enabled or disabled under hardware control. See Status Register for further information. Additionally, the Power-down instruction offers an extra level of write protection as all instructions are ignored except for the Release Power-down instruction.
Publication Release Date: March 13, 2009
- 11 - Preliminary - Revision B
W25Q16BV
10. CONTROL AND STATUS REGISTERS
The Read Status Register-1 and Status Register-2 instructions can be used to provide status on the availability of the Flash memory array, if the device is write enabled or disabled, the state of write protection, the Quad SPI setting and Erase Suspend status. The Write Status Register instruction can be used to configure the devices write protection features and Quad SPI setting. Write access to the Status Register is controlled by the state of the non-volatile Status Register Protect bits (SRP0, SRP1), the Write Enable instruction, and in some cases the /WP pin.
10.1 STATUS REGISTER
10.1.1 BUSY
BUSY is a read only bit in the status register (S0) that is set to a 1 state when the device is executing a Page Program, Sector Erase, Block Erase, Chip Erase or Write Status Register instruction. During this time the device will ignore further instructions except for the Read Status Register and Erase Suspend instruction (see tW, tPP, tSE, tBE, and tCE in AC Characteristics). When the program, erase or write status register instruction has completed, the BUSY bit will be cleared to a 0 state indicating the device is ready for further instructions.
10.1.2 Write Enable Latch (WEL)
Write Enable Latch (WEL) is a read only bit in the status register (S1) that is set to a 1 after executing a Write Enable Instruction. The WEL status bit is cleared to a 0 when the device is write disabled. A write disable state occurs upon power-up or after any of the following instructions: Write Disable, Page Program, Sector Erase, Block Erase, Chip Erase and Write Status Register.
10.1.3 Block Protect Bits (BP2, BP1, BP0)
The Block Protect Bits (BP2, BP1, BP0) are non-volatile read/write bits in the status register (S4, S3, and S2) that provide Write Protection control and status. Block Protect bits can be set using the Write Status Register Instruction (see tW in AC characteristics). All, none or a portion of the memory array can be protected from Program and Erase instructions (see Status Register Memory Protection table). The factory default setting for the Block Protection Bits is 0, none of the array protected.
10.1.4 Top/Bottom Block Protect (TB)
The non-volatile Top/Bottom bit (TB) controls if the Block Protect Bits (BP2, BP1, BP0) protect from the Top (TB=0) or the Bottom (TB=1) of the array as shown in the Status Register Memory Protection table. The factory default setting is TB=0. The TB bit can be set with the Write Status Register Instruction depending on the state of the SRP0, SRP1 and WEL bits.
10.1.5 Sector/Block Protect (SEC)
The non-volatile Sector protect bit (SEC) controls if the Block Protect Bits (BP2, BP1, BP0) protect 4KB Sectors (SEC=1) or KB Blocks (SEC=0) in the Top (TB=0) or the Bottom (TB=1) of the array as shown in the Status Register Memory Protection table. The default setting is SEC=0.
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W25Q16BV
10.1.6 Status Register Protect (SRP1, SRP0)
The Status Register Protect bits (SRP1 and SRP0) are non-volatile read/write bits in the status register (S8 and S7). The SRP bits control the method of write protection: software protection, hardware protection, power supply lock-down or one time programmable (OTP) protection.
Status Register
SRP1 SRP0 /WP Description
/WP pin has no control. The Status register can be written to after a Write Enable instruction, WEL=1. [Factory Default] When /WP pin is low the Status Register locked and can not be written to.
When /WP pin is high the Status register is unlocked and can be written to after a Write Enable instruction, WEL=1. Status Register is protected and can not be written to again until the next power-down, power-up cycle.(2)
Status Register is permanently protected and can not be written to.
Software
0 0 X Protection Hardware
0 1 0 Protected Hardware
0 1 1 Unprotected Power Supply
1 0 X Lock-Down(1) One Time
1 1 X Program(1)
Note:
1. These features are available upon special order. Please refer to Ordering Information.
2. When SRP1, SRP0 = (1, 0), a power-down, power-up cycle will change SRP1, SRP0 to (0, 0) state.
10.1.7 Erase Suspend Status (SUS)
The Suspend Status bit is a read only bit in the status register (S15) that is set to 1 after executing an Erase Suspend (75h) instruction. The SUS status bit is cleared to 0 by Erase Resume (7Ah) instruction as well as a power-down, power-up cycle.
10.1.8 Quad Enable (QE)
The Quad Enable (QE) bit is a non-volatile read/write bit in the status register (S9) that allows Quad operation. When the QE bit is set to a 0 state (factory default) the /WP pin and /Hold are enabled. When the QE bit is set to a 1 the Quad IO2 and IO3 pins are enabled.
WARNING: The QE bit should never be set to a 1 during standard SPI or Dual SPI operation if the /WP or /HOLD pins are tied directly to the power supply or ground.
Publication Release Date: March 13, 2009
- 13 - Preliminary - Revision B
W25Q16BV
S7SRP0STATUS REGISTER PROTECT 0(non-volatile)SECTOR PROTECT(non-volatile)TOP/BOTTOM PROTECT(non-volatile)BLOCK PROTECT BITS(non-volatile)WRITE ENABLE LATCHERASE/WRITE IN PROGRESSS6SECS5TBS4BP2S3BP1S2BP0S1S0WELBUSY Figure 3a. Status Register-1
S15SUSS14(R)S13(R)S12(R)S11(R)S10(R)S9QES8SRP1SUSPEND STATUSRESERVEDQUAD ENABLE(non-volatile)STATUS REGISTER PROTECT 1(non-volatile)(non-volatile) Figure 3b. Status Register-2
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W25Q16BV
10.1.9 Status Register Memory Protection
STATUS REGISTER(1)
W25Q16BV (16M-BIT) MEMORY PROTECTION
ADDRESSES
DENSITY
PORTION
SEC TB BP2 BP1 BP0 BLOCK(S) X X 0 0 0 NONE 0 0 0 0 0 0 0 0 0 0 X 1 1 1 1 1 1 1 1
0 0 0 0 0 1 1 1 1 1 X 0 0 0 0 1 1 1 1
0 0 0 1 1 0 0 0 1 1 1 0 0 0 1 0 0 0 1
0 1 1 0 0 0 1 1 0 0 1 0 1 1 0 0 1 1 0
1 0 1 0 1 1 0 1 0 1 X 1 0 1 X 1 0 1 X
31 30 and 31 28 thru 31 24 thru 31 16 thru 31
0 0 and 1 0 thru 3 0 thru 7 0 thru 15 0 thru 31 31 31 31 31 0 0 0 0
NONE
1F0000h – 1FFFFFh 1E0000h – 1FFFFFh 1C0000h – 1FFFFFh 180000h – 1FFFFFh 100000h – 1FFFFFh 000000h – 00FFFFh 000000h – 01FFFFh 000000h – 03FFFFh 000000h – 07FFFFh 000000h – 0FFFFFh 000000h – 1FFFFFh 1FF000h – 1FFFFFh 1FE000h – 1FFFFFh 1FC000h – 1FFFFFh 1F8000h – 1FFFFFh 000000h – 000FFFh 000000h – 001FFFh 000000h – 003FFFh 000000h – 007FFFh
NONE KB 128KB 256KB 512KB 1MB KB 128KB 256KB 512KB 1MB 2MB 4KB 8KB 16KB 32KB 4KB 8KB 16KB 32KB
NONE Upper 1/32 Upper 1/16 Upper 1/8 Upper 1/4 Upper 1/2 Lower 1/32 Lower 1/16 Lower 1/8 Lower 1/4 Lower 1/2 ALL Top Block Top Block Top Block Top Block Bottom Block Bottom Block Bottom Block Bottom Block
Note:
1. x = don’t care
Publication Release Date: March 13, 2009
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W25Q16BV
10.2 INSTRUCTIONS
The instruction set of the W25Q16BV consists of thirty basic instructions that are fully controlled through the SPI bus (see Instruction Set table1-3). Instructions are initiated with the falling edge of Chip Select (/CS). The first byte of data clocked into the DI input provides the instruction code. Data on the DI input is sampled on the rising edge of clock with most significant bit (MSB) first.
Instructions vary in length from a single byte to several bytes and may be followed by address bytes, data bytes, dummy bytes (don’t care), and in some cases, a combination. Instructions are completed with the rising edge of edge /CS. Clock relative timing diagrams for each instruction are included in figures 4 through 32. All read instructions can be completed after any clocked bit. However, all instructions that Write, Program or Erase must complete on a byte boundary (/CS driven high after a full 8-bits have been clocked) otherwise the instruction will be terminated. This feature further protects the device from inadvertent writes. Additionally, while the memory is being programmed or erased, or when the Status Register is being written, all instructions except for Read Status Register will be ignored until the program or erase cycle has completed.
10.2.1 Manufacturer and Device Identification
MANUFACTURER ID
(M7-M0) EFh
Winbond Serial Flash
Device ID
Instruction
(ID7-ID0) ABh, 90h
(ID15-ID0) 9Fh
W25Q16BV 14h 4015h
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10.2.2 Instruction Set Table 1 (Erase, Program Instructions)(1)
INSTRUCTION NAME
Write Enable Write Disable
Read Status Register-1 Read Status Register-2 Write Status Register Page Program Quad Page Program Sector Erase (4KB) Block Erase (32KB) Block Erase (KB) Chip Erase Erase Suspend Erase Resume Power-down
Continuous Read Mode Reset
(4)
BYTE 5
BYTE 6
BYTE 1 (CODE)
06h 04h 05h 35h 01h 02h 32h 20h 52h D8h C7h/60h 75h 7Ah B9h FFh
BYTE 2 BYTE 3 BYTE 4
(S7–S0)
(2)
(S15-S8)
(2)
(S7–S0) (S15-S8) A23–A16 A15–A8 A7–A0 (D7–D0) A23–A16 A15–A8 A7–A0 (D7–D0, …) A23–A16 A15–A8 A7–A0 A23–A16 A15–A8 A7–A0 A23–A16 A15–A8 A7–A0
FFh (3)
Notes:
1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “()” indicate data being
read from the device on the DO pin. 2. The Status Register contents will repeat continuously until /CS terminates the instruction. 3. Quad Page Program Input Data:
IO0 = (D4, D0, ……) IO1 = (D5, D1, ……) IO2 = (D6, D2, ……) IO3 = (D7, D3, ……)
4. This instruction is recommended when using the Dual or Quad “Continuous Read Mode” feature. See section 10.2.32 for more information.
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10.2.3 Instruction Set Table 2 (Read Instructions)
INSTRUCTION NAME
Read Data Fast Read
Fast Read Dual Output Fast Read Dual I/O Fast Read Quad Output Fast Read Quad I/O Word Read Quad I/O Octal Word Read Quad I/O
(8)
(7)
BYTE 4
BYTE 5
BYTE 6
BYTE 1 (CODE)
03h 0Bh 3Bh BBh 6Bh EBh E7h E3h
BYTE 2 BYTE 3
A23-A16 A15-A8 A7-A0 (D7-D0) A23-A16 A15-A8 A7-A0 dummy (D7-D0) A23-A16 A15-A8 A7-A0 dummy (D7-D0, …)A23-A8 A7-A0, M7-M0 (D7-D0, …)
(2)
(2)
(1)
(1)
(3)
A23-A16 A15-A8 A7-A0 dummy (D7-D0, …)A23-A0, M7-M0 A23-A0, M7-M0
(4)(4)(4)
(x,x,x,x, D7-D0, …) (D7-D0, …) (x,x, D7-D0, …) (D7-D0, …)
(3)(6)
(3)
(5)(3)
A23-A0, M7-M0 (D7-D0, …)
Notes:
1. Dual Output data
IO0 = (D6, D4, D2, D0) IO1 = (D7, D5, D3, D1)
2. Dual Input Address
IO0 = A22, A20, A18, A16, A14, A12, A10, A8 A6, A4, A2, A0, M6, M4, M2, M0 IO1 = A23, A21, A19, A17, A15, A13, A11, A9 A7, A5, A3, A1, M7, M5, M3, M1
3. Quad Output Data
IO0 = (D4, D0, …..) IO1 = (D5, D1, …..) IO2 = (D6, D2, …..) IO3 = (D7, D3, …..)
4. Quad Input Address
IO0 = A20, A16, A12, A8, A4, A0, M4, M0 IO1 = A21, A17, A13, A9, A5, A1, M5, M1 IO2 = A22, A18, A14, A10, A6, A2, M6, M2 IO3 = A23, A19, A15, A11, A7, A3, M7, M3
5. Fast Read Quad I/O Data
IO0 = (x, x, x, x, D4, D0, …..) IO1 = (x, x, x, x, D5, D1, …..) IO2 = (x, x, x, x, D6, D2, …..) IO3 = (x, x, x, x, D7, D3, …..)
6. Word Read Quad I/O Data
IO0 = (x, x, D4, D0, …..) IO1 = (x, x, D5, D1, …..) IO2 = (x, x, D6, D2, …..) IO3 = (x, x, D7, D3, …..)
7. The lowest address bit must be 0. ( A0 = 0 )
8. The lowest 4 address bits must be 0. ( A0, A1, A2, A3 = 0 )
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10.2.4 Instruction Set Table 3 (ID, Security Instructions)
INSTRUCTION
NAME
Release Power down / Device ID Manufacturer/ Device ID
Manufacturer/Device ID by Dual I/O
Manufacture/Device ID by Quad I/O JEDEC ID Read Unique ID
(2)
BYTE 4
BYTE 5
(1)
BYTE 1 (CODE)
ABh 90h 92h 94h 9Fh 4Bh
BYTE 2 BYTE 3 BYTE 6
dummy dummy dummy dummy A23-A8 A23-A0, M[7:0](MF7-MF0) Manufacturer
A7-A0, M[7:0]
dummy (ID7-ID0)
00h (MF7-MF0) (ID7-ID0)
(MF[7:0], ID[7:0])
xxxx, (MF[7:0], ID[7:0]) (MF[7:0], ID[7:0], …)
(ID15-ID8) Memory Type
(ID7-ID0) Capacity
dummy dummy dummy dummy (ID63-ID0)
Notes:
1. The Device ID will repeat continuously until /CS terminates the instruction. 2. See Manufacturer and Device Identification table for Device ID information.
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10.2.5 Write Enable (06h)
The Write Enable instruction (Figure 4) sets the Write Enable Latch (WEL) bit in the Status Register to a 1. The WEL bit must be set prior to every Page Program, Sector Erase, Block Erase, Chip Erase and Write Status Register instruction. The Write Enable instruction is entered by driving /CS low, shifting the instruction code “06h” into the Data Input (DI) pin on the rising edge of CLK, and then driving /CS high.
Figure 4. Write Enable Instruction Sequence Diagram
10.2.6 Write Disable (04h)
The Write Disable instruction (Figure 5) resets the Write Enable Latch (WEL) bit in the Status Register to a 0. The Write Disable instruction is entered by driving /CS low, shifting the instruction code “04h” into the DI pin and then driving /CS high. Note that the WEL bit is automatically reset after Power-up and upon completion of the Write Status Register, Page Program, Sector Erase, Block Erase and Chip Erase instructions.
Figure 5. Write Disable Instruction Sequence Diagram
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10.2.7 Read Status Register-1 (05h) and Read Status Register-2 (35h)
The Read Status Register instructions allow the 8-bit Status Registers to be read. The instruction is entered by driving /CS low and shifting the instruction code “05h” for Status Register-1 and “35h” for Status Register-2 into the DI pin on the rising edge of CLK. The status register bits are then shifted out on the DO pin at the falling edge of CLK with most significant bit (MSB) first as shown in figure 6. The Status Register bits are shown in figure 3a and 3b and include the BUSY, WEL, BP2-BP0, TB, SEC, SRP0, SRP1, QE and SUS bits (see description of the Status Register earlier in this datasheet).
The Read Status Register instruction may be used at any time, even while a Program, Erase or Write Status Register cycle is in progress. This allows the BUSY status bit to be checked to determine when the cycle is complete and if the device can accept another instruction. The Status Register can be read continuously, as shown in Figure 6. The instruction is completed by driving /CS high.
Figure 6. Read Status Register Instruction Sequence Diagram
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10.2.8 Write Status Register (01h)
The Write Status Register instruction allows the Status Register to be written. A Write Enable instruction must previously have been executed for the device to accept the Write Status Register Instruction (Status Register bit WEL must equal 1). Once write enabled, the instruction is entered by driving /CS low, sending the instruction code “01h”, and then writing the status register data byte as illustrated in figure 7. The Status Register bits are shown in figure 3 and described earlier in this datasheet.
Only non-volatile Status Register bits SRP0, SEC, TB, BP2, BP1, BP0 (bits 7, 5, 4, 3, 2 of Status Register-1) and QE, SRP1(bits 9 and 8 of Status Register-2) can be written to. All other Status Register bit locations are read-only and will not be affected by the Write Status Register instruction.
The /CS pin must be driven high after the eighth or sixteenth bit of data that is clocked in. If this is not done the Write Status Register instruction will not be executed. If /CS is driven high after the eighth clock (compatible with the 25X series) the QE and SRP1 bits will be cleared to 0. After /CS is driven high, the self-timed Write Status Register cycle will commence for a time duration of tW (See AC Characteristics). While the Write Status Register cycle is in progress, the Read Status Register instruction may still be accessed to check the status of the BUSY bit. The BUSY bit is a 1 during the Write Status Register cycle and a 0 when the cycle is finished and ready to accept other instructions again. After the Write Register cycle has finished the Write Enable Latch (WEL) bit in the Status Register will be cleared to 0.
The Write Status Register instruction allows the Block Protect bits (SEC, TB, BP2, BP1 and BP0) to be set for protecting all, a portion, or none of the memory from erase and program instructions. Protected areas become read-only (see Status Register Memory Protection table and description). The Write Status Register instruction also allows the Status Register Protect bits (SRP0, SRP1) to be set. Those bits are used in conjunction with the Write Protect (/WP) pin, Lock out or OTP features to disable writes to the status register. Please refer to 10.1.6 for detailed descriptions regarding Status Register protection methods. Factory default for all status Register bits are 0.
Figure 7. Write Status Register Instruction Sequence Diagram
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10.2.9 Read Data (03h)
The Read Data instruction allows one more data bytes to be sequentially read from the memory. The instruction is initiated by driving the /CS pin low and then shifting the instruction code “03h” followed by a 24-bit address (A23-A0) into the DI pin. The code and address bits are latched on the rising edge of the CLK pin. After the address is received, the data byte of the addressed memory location will be shifted out on the DO pin at the falling edge of CLK with most significant bit (MSB) first. The address is automatically incremented to the next higher address after each byte of data is shifted out allowing for a continuous stream of data. This means that the entire memory can be accessed with a single instruction as long as the clock continues. The instruction is completed by driving /CS high.
The Read Data instruction sequence is shown in figure 8. If a Read Data instruction is issued while an Erase, Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any effects on the current cycle. The Read Data instruction allows clock rates from D.C. to a maximum of fR (see AC Electrical Characteristics).
Figure 8. Read Data Instruction Sequence Diagram
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10.2.10 Fast Read (0Bh)
The Fast Read instruction is similar to the Read Data instruction except that it can operate at the highest possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight “dummy” clocks after the 24-bit address as shown in figure 9. The dummy clocks allow the devices internal circuits additional time for setting up the initial address. During the dummy clocks the data value on the DO pin is a “don’t care”.
Figure 9. Fast Read Instruction Sequence Diagram
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10.2.11 Fast Read Dual Output (3Bh)
The Fast Read Dual Output (3Bh) instruction is similar to the standard Fast Read (0Bh) instruction except that data is output on two pins; IO0 and IO1. This allows data to be transferred from the W25Q16BV at twice the rate of standard SPI devices. The Fast Read Dual Output instruction is ideal for quickly downloading code from Flash to RAM upon power-up or for applications that cache code-segments to RAM for execution.
Similar to the Fast Read instruction, the Fast Read Dual Output instruction can operate at the highest possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight “dummy” clocks after the 24-bit address as shown in figure 10. The dummy clocks allow the device's internal circuits additional time for setting up the initial address. The input data during the dummy clocks is “don’t care”. However, the IO0 pin should be high-impedance prior to the falling edge of the first data out clock.
Figure 10. Fast Read Dual Output Instruction Sequence Diagram
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10.2.12 Fast Read Quad Output (6Bh)
The Fast Read Quad Output (6Bh) instruction is similar to the Fast Read Dual Output (3Bh) instruction except that data is output on four pins, IO0, IO1, IO2, and IO3. A Quad enable of Status Register-2 must be executed before the device will accept the Fast Read Quad Output Instruction (Status Register bit QE must equal 1). The Fast Read Quad Output Instruction allows data to be transferred from the W25Q16BV at four times the rate of standard SPI devices.
The Fast Read Quad Output instruction can operate at the highest possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight “dummy” clocks after the 24-bit address as shown in figure 11. The dummy clocks allow the device's internal circuits additional time for setting up the initial address. The input data during the dummy clocks is “don’t care”. However, the IO pins should be high-impedance prior to the falling edge of the first data out clock.
Figure 11. Fast Read Quad Output Instruction Sequence Diagram
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10.2.13 Fast Read Dual I/O (BBh)
The Fast Read Dual I/O (BBh) instruction allows for improved random access while maintaining two IO pins, IO0 and IO1. It is similar to the Fast Read Dual Output (3Bh) instruction but with the capability to input the Address bits (A23-0) two bits per clock. This reduced instruction overhead may allow for code execution (XIP) directly from the Dual SPI in some applications.
Fast Read Dual I/O with “Continuous Read Mode”
The Fast Read Dual I/O instruction can further reduce instruction overhead through setting the “Continuous Read Mode” bits (M7-0) after the input Address bits (A23-0), as shown in figure 12a. The upper nibble of the (M7-4) controls the length of the next Fast Read Dual I/O instruction through the inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t care (“x”). However, the IO pins should be high-impedance prior to the falling edge of the first data out clock. If the “Continuous Read Mode” bits (M7-0) equals “Ax” hex, then the next Fast Read Dual I/O instruction (after /CS is raised and then lowered) does not require the BBh instruction code, as shown in figure 12b. This reduces the instruction sequence by eight clocks and allows the Read address to be immediately entered after /CS is asserted low. If the “Continuous Read Mode” bits (M7-0) are any value other than “Ax” hex, the next instruction (after /CS is raised and then lowered) requires the first byte instruction code, thus returning to normal operation. A “Continuous Read Mode” Reset instruction can be used to reset (M7-0) before issuing normal instructions (See 10.2.33 for detailed descriptions).
Figure 12a. Fast Read Dual I/O Instruction Sequence Diagram (M7-0 = 0xh or NOT Axh)
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Figure 12b. Fast Read Dual I/O Instruction Sequence Diagram (M7-0 = Axh)
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10.2.14 Fast Read Quad I/O (EBh)
The Fast Read Quad I/O (EBh) instruction is similar to the Fast Read Dual I/O (BBh) instruction except that address and data bits are input and output through four pins IO0, IO1, IO2 and IO3 and four Dummy clocks are required prior to the data output. The Quad I/O dramatically reduces instruction overhead allowing faster random access for code execution (XIP) directly from the Quad SPI. The Quad Enable bit (QE) of Status Register-2 must be set to enable the Fast read Quad I/O Instruction.
Fast Read Quad I/O with “Continuous Read Mode”
The Fast Read Quad I/O instruction can further reduce instruction overhead through setting the “Continuous Read Mode” bits (M7-0) after the input Address bits (A23-0), as shown in figure 13a. The upper nibble of the (M7-4) controls the length of the next Fast Read Quad I/O instruction through the inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t care (“x”). However, the IO pins should be high-impedance prior to the falling edge of the first data out clock. If the “Continuous Read Mode” bits (M7-0) equals “Ax” hex, then the next Fast Read Quad I/O instruction (after /CS is raised and then lowered) does not require the EBh instruction code, as shown in figure 13b. This reduces the instruction sequence by eight clocks and allows the Read address to be immediately entered after /CS is asserted low. If the “Continuous Read Mode” bits (M7-0) are any value other than “Ax” hex, the next instruction (after /CS is raised and then lowered) requires the first byte instruction code, thus returning to normal operation. A “Continuous Read Mode” Reset instruction can be used to reset (M7-0) before issuing normal instructions (See 10.2.33 for detailed descriptions).
Byte 1 Byte 2
Figure 13a. Fast Read Quad I/O Instruction Sequence Diagram (M7-0 = 0xh or NOT Axh)
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Figure 13b. Fast Read Quad I/O Instruction Sequence Diagram (M7-0 = Axh)
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10.2.15 Word Read Quad I/O (E7h)
The Word Read Quad I/O (E7h) instruction is similar to the Fast Read Quad I/O (EBh) instruction except that the lowest Address bit (A0) must equal 0 and only two Dummy clocks are required prior to the data output. The Quad I/O dramatically reduces instruction overhead allowing faster random access for code execution (XIP) directly from the Quad SPI. The Quad Enable bit (QE) of Status Register-2 must be set to enable the Word Read Quad I/O Instruction.
Word Read Quad I/O with “Continuous Read Mode”
The Word Read Quad I/O instruction can further reduce instruction overhead through setting the “Continuous Read Mode” bits (M7-0) after the input Address bits (A23-0), as shown in figure 14a. The upper nibble of the (M7-4) controls the length of the next Fast Read Quad I/O instruction through the inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t care (“x”). However, the IO pins should be high-impedance prior to the falling edge of the first data out clock. If the “Continuous Read Mode” bits (M7-0) equals “Ax” hex, then the next Word Read Quad I/O instruction (after /CS is raised and then lowered) does not require the E7h instruction code, as shown in figure 14b. This reduces the instruction sequence by eight clocks and allows the Read address to be immediately entered after /CS is asserted low. If the “Continuous Read Mode” bits (M7-0) are any value other than “Ax” hex, the next instruction (after /CS is raised and then lowered) requires the first byte instruction code, thus returning to normal operation. A “Continuous Read Mode” Reset instruction can be used to reset (M7-0) before issuing normal instructions (See 10.2.33 for detailed descriptions).
Instruction (E7h)404040515151626262737373Byte 1Byte 2Byte 3
Figure 14a. Word Read Quad I/O Instruction Sequence Diagram (M7-0 = 0xh or NOT Axh)
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Figure 14b. Word Read Quad I/O Instruction Sequence Diagram (M7-0 = Axh)
Byte 1Byte 2737373626262515151404040Byte 3
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10.2.16 Octal Word Read Quad I/O (E3h)
The Octal Word Read Quad I/O (E3h) instruction is similar to the Fast Read Quad I/O (EBh) instruction except that the lower four Address bits (A0, A1, A2, A3) must equal 0. As a result, the four dummy clocks are not required, which further reduces the instruction overhead allowing even faster random access for code execution (XIP). The Quad Enable bit (QE) of Status Register-2 must be set to enable the Octal Word Read Quad I/O Instruction.
Octal Word Read Quad I/O with “Continuous Read Mode”
The Octal Word Read Quad I/O instruction can further reduce instruction overhead through setting the “Continuous Read Mode” bits (M7-0) after the input Address bits (A23-0), as shown in figure 15a. The upper nibble of the (M7-4) controls the length of the next Octal Word Read Quad I/O instruction through the inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t care (“x”). However, the IO pins should be high-impedance prior to the falling edge of the first data out clock.
If the “Continuous Read Mode” bits (M7-0) equals “Ax” hex, then the next Octal Word Read Quad I/O instruction (after /CS is raised and then lowered) does not require the E3h instruction code, as shown in figure 15b. This reduces the instruction sequence by eight clocks and allows the Read address to be immediately entered after /CS is asserted low. If the “Continuous Read Mode” bits (M7-0) are any value other than “Ax” hex, the next instruction (after /CS is raised and then lowered) requires the first byte instruction code, thus returning to normal operation. A “Continuous Read Mode” Reset instruction can be used to reset (M7-0) before issuing normal instructions (See 10.2.33 for detailed descriptions).
Instruction (E3h)40404040515151516262626273737373Byte 1Byte 2Byte 3Byte 4 Figure 15a. Octal Word Read Quad I/O Instruction Sequence Diagram (M7-0 = 0xh or NOT Axh)
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40404040515151516262626273737373Byte 1Byte 2Byte 3Byte 4 Figure 15b. Octal Word Read Quad I/O Instruction Sequence Diagram (M7-0 = Axh)
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10.2.17 Page Program (02h)
The Page Program instruction allows from one byte to 256 bytes (a page) of data to be programmed at previously erased (FFh) memory locations. A Write Enable instruction must be executed before the device will accept the Page Program Instruction (Status Register bit WEL= 1). The instruction is initiated by driving the /CS pin low then shifting the instruction code “02h” followed by a 24-bit address (A23-A0) and at least one data byte, into the DI pin. The /CS pin must be held low for the entire length of the instruction while data is being sent to the device. The Page Program instruction sequence is shown in figure 16.
If an entire 256 byte page is to be programmed, the last address byte (the 8 least significant address bits) should be set to 0. If the last address byte is not zero, and the number of clocks exceed the remaining page length, the addressing will wrap to the beginning of the page. In some cases, less than 256 bytes (a partial page) can be programmed without having any effect on other bytes within the same page. One condition to perform a partial page program is that the number of clocks can not exceed the remaining page length. If more than 256 bytes are sent to the device the addressing will wrap to the beginning of the page and overwrite previously sent data.
As with the write and erase instructions, the /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the Page Program instruction will not be executed. After /CS is driven high, the self-timed Page Program instruction will commence for a time duration of tpp (See AC Characteristics). While the Page Program cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1 during the Page Program cycle and becomes a 0 when the cycle is finished and the device is ready to accept other instructions again. After the Page Program cycle has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Page Program instruction will not be executed if the addressed page is protected by the Block Protect (BP2, BP1, and BP0) bits.
Figure 16. Page Program Instruction Sequence Diagram
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10.2.18 Quad Input Page Program (32h)
The Quad Page Program instruction allows up to 256 bytes of data to be programmed at previously erased (FFh) memory locations using four pins: IO0, IO1, IO2, and IO3. The Quad Page Program can improve performance for PROM Programmer and applications that have slow clock speeds <5MHz. Systems with faster clock speed will not realize much benefit for the Quad Page Program instruction since the inherent page program time is much greater than the time it take to clock-in the data.
To use Quad Page Program the Quad Enable in Status Register-2 must be set (QE=1). A Write Enable instruction must be executed before the device will accept the Quad Page Program instruction (Status Register-1, WEL=1). The instruction is initiated by driving the /CS pin low then shifting the instruction code “32h” followed by a 24-bit address (A23-A0) and at least one data byte, into the IO pins. The /CS pin must be held low for the entire length of the instruction while data is being sent to the device. All other functions of Quad Page Program are identical to standard Page Program. The Quad Page Program instruction sequence is shown in figure 17.
Figure 17. Quad Input Page Program Instruction Sequence Diagram
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10.2.19 Sector Erase (20h)
The Sector Erase instruction sets all memory within a specified sector (4K-bytes) to the erased state of all 1s (FFh). A Write Enable instruction must be executed before the device will accept the Sector Erase Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0) (see Figure 2). The Sector Erase instruction sequence is shown in figure 18.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector Erase instruction will commence for a time duration of tSE (See AC Characteristics). While the Sector Erase cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the cycle is finished and the device is ready to accept other instructions again. After the Sector Erase cycle has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector Erase instruction will not be executed if the addressed page is protected by the Block Protect (SEC, TB, BP2, BP1, and BP0) bits (see Status Register Memory Protection table).
Figure 18. Sector Erase Instruction Sequence Diagram
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10.2.20 32KB Block Erase (52h)
The Block Erase instruction sets all memory within a specified block (32K-bytes) to the erased state of all 1s (FFh). A Write Enable instruction must be executed before the device will accept the Block Erase Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the instruction code “52h” followed a 24-bit block address (A23-A0) (see Figure 2). The Block Erase instruction sequence is shown in figure 19.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block Erase instruction will commence for a time duration of tBE1 (See AC Characteristics). While the Block Erase cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is finished and the device is ready to accept other instructions again. After the Block Erase cycle has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase instruction will not be executed if the addressed page is protected by the Block Protect (SEC, TB, BP2, BP1, and BP0) bits (see Status Register Memory Protection table).
Figure 19. 32KB Block Erase Instruction Sequence Diagram
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10.2.21 KB Block Erase (D8h)
The Block Erase instruction sets all memory within a specified block (K-bytes) to the erased state of all 1s (FFh). A Write Enable instruction must be executed before the device will accept the Block Erase Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the instruction code “D8h” followed a 24-bit block address (A23-A0) (see Figure 2). The Block Erase instruction sequence is shown in figure 20.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block Erase instruction will commence for a time duration of tBE (See AC Characteristics). While the Block Erase cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is finished and the device is ready to accept other instructions again. After the Block Erase cycle has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase instruction will not be executed if the addressed page is protected by the Block Protect (SEC, TB, BP2, BP1, and BP0) bits (see Status Register Memory Protection table).
Figure 20. KB Block Erase Instruction Sequence Diagram
Publication Release Date: March 13, 2009
- 39 - Preliminary - Revision B
W25Q16BV
10.2.22 Chip Erase (C7h / 60h)
The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A Write Enable instruction must be executed before the device will accept the Chip Erase Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the instruction code “C7h” or “60h”. The Chip Erase instruction sequence is shown in figure 21.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Chip Erase instruction will not be executed. After /CS is driven high, the self-timed Chip Erase instruction will commence for a time duration of tCE (See AC Characteristics). While the Chip Erase cycle is in progress, the Read Status Register instruction may still be accessed to check the status of the BUSY bit. The BUSY bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and the device is ready to accept other instructions again. After the Chip Erase cycle has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Chip Erase instruction will not be executed if any section of the array is protected by the Block Protect (BP2, BP1, and BP0) bits (see Status Register Memory Protection table).
Figure 21. Chip Erase Instruction Sequence Diagram
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W25Q16BV
10.2.23 Erase Suspend (75h)
The Erase Suspend instruction “75h”, allows the system to interrupt a sector or block erase operation and then read from or program data to, any other sector or block. The Write Status Register instruction (01h) and Erase instructions (20h, 52h, D8h, C7h, 60h ) are not allowed during suspend. Erase Suspend is valid only during the sector or block erase operation. If written during the chip erase or program operation, the Erase Suspend instruction is ignored. A maximum of time of “tsus” (See AC Characteristics) is required to suspend the erase operation. The BUSY bit in the Status register will clear to 0 after Erase Suspend. A power-off during the suspend period will reset the device and release the suspend state.
Figure 22. Erase Suspend Instruction Sequence Diagram
10.2.24 Erase Resume (7Ah)
The Erase Resume instruction must be written to resume the sector or block erase operation after an Erase Suspend. After issued the BUSY bit in the status register will be set to a 1 and the sector or block will complete the erase operation. Resume instructions will be ignored unless an Erase Suspend operation is active.
Figure 23. Erase Resume Instruction Sequence Diagram
Publication Release Date: March 13, 2009
- 41 - Preliminary - Revision B
W25Q16BV
10.2.25 Power-down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further reduced with the Power-down instruction. The lower power consumption makes the Power-down instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC Characteristics). The instruction is initiated by driving the /CS pin low and shifting the instruction code “B9h” as shown in figure 24.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-down instruction will not be executed. After /CS is driven high, the power-down state will entered within the time duration of tDP (See AC Characteristics). While in the power-down state only the Release from Power-down / Device ID instruction, which restores the device to normal operation, will be recognized. All other instructions are ignored. This includes the Read Status Register instruction, which is always available during normal operation. Ignoring all but one instruction makes the Power Down state a useful condition for securing maximum write protection. The device always powers-up in the normal operation with the standby current of ICC1.
Figure 24. Deep Power-down Instruction Sequence Diagram
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W25Q16BV
10.2.26 Release Power-down / Device ID (ABh)
The Release from Power-down / Device ID instruction is a multi-purpose instruction. It can be used to release the device from the power-down state, or obtain the devices electronic identification (ID) number. To release the device from the power-down state, the instruction is issued by driving the /CS pin low, shifting the instruction code “ABh” and driving /CS high as shown in figure 25a. Release from power-down will take the time duration of tRES1 (See AC Characteristics) before the device will resume normal operation and other instructions are accepted. The /CS pin must remain high during the tRES1 time duration.
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated by driving the /CS pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The Device ID bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as shown in figure 25b. The Device ID values for the W25Q16BV is listed in Manufacturer and Device Identification table. The Device ID can be read continuously. The instruction is completed by driving /CS high.
When used to release the device from the power-down state and obtain the Device ID, the instruction is the same as previously described, and shown in figure 25b, except that after /CS is driven high it must remain high for a time duration of tRES2 (See AC Characteristics). After this time duration the device will resume normal operation and other instructions will be accepted. If the Release from Power-down / Device ID instruction is issued while an Erase, Program or Write cycle is in process (when BUSY equals 1) the instruction is ignored and will not have any effects on the current cycle.
Figure 25a. Release Power-down Instruction Sequence Diagram
Publication Release Date: March 13, 2009
- 43 - Preliminary - Revision B
W25Q16BV
Figure 25b. Release Power-down / Device ID Instruction Sequence Diagram
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W25Q16BV
10.2.27 Read Manufacturer / Device ID (90h)
The Read Manufacturer/Device ID instruction is an alternative to the Release from Power-down / Device ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device ID. The Read Manufacturer/Device ID instruction is very similar to the Release from Power-down / Device ID instruction. The instruction is initiated by driving the /CS pin low and shifting the instruction code “90h” followed by a 24-bit address (A23-A0) of 000000h. After which, the Manufacturer ID for Winbond (EFh) and the Device ID are shifted out on the falling edge of CLK with most significant bit (MSB) first as shown in figure 26. The Device ID values for the W25Q16BV is listed in Manufacturer and Device Identification table. If the 24-bit address is initially set to 000001h the Device ID will be read first and then followed by the Manufacturer ID. The Manufacturer and Device IDs can be read continuously, alternating from one to the other. The instruction is completed by driving /CS high.
Figure 26. Read Manufacturer / Device ID Instruction Sequence Diagram
Publication Release Date: March 13, 2009
- 45 - Preliminary - Revision B
W25Q16BV
10.2.28 Read Manufacturer / Device ID Dual I/O (92h)
The Read Manufacturer / Device ID Dual I/O instruction is an alternative to the Read Manufacturer / Device ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device ID at 2x speed.
The Read Manufacturer / Device ID Dual I/O instruction is similar to the Fast Read Dual I/O instruction. The instruction is initiated by driving the /CS pin low and shifting the instruction code “92h” followed by a 24-bit address (A23-A0) of 000000h, but with the capability to input the Address bits two bits per clock. After which, the Manufacturer ID for Winbond (EFh) and the Device ID are shifted out 2 bits per clock on the falling edge of CLK with most significant bits (MSB) first as shown in figure 27. The Device ID values for the W25Q16BV is listed in Manufacturer and Device Identification table. If the 24-bit address is initially set to 000001h the Device ID will be read first and then followed by the Manufacturer ID. The Manufacturer and Device IDs can be read continuously, alternating from one to the other. The instruction is completed by driving /CS high.
Figure 27. Read Manufacturer / Device ID Dual I/O Instruction Sequence Diagram
Note:
The “Continuous Read Mode” bits M(7-0) must be set to Fxh to be compatible with Fast Read Dual I/O instruction.
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W25Q16BV
10.2.29 Read Manufacturer / Device ID Quad I/O (94h)
The Read Manufacturer / Device ID Quad I/O instruction is an alternative to the Read Manufacturer / Device ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device ID at 4x speed.
The Read Manufacturer / Device ID Quad I/O instruction is similar to the Fast Read Quad I/O instruction. The instruction is initiated by driving the /CS pin low and shifting the instruction code “94h” followed by a four clock dummy cycles and then a 24-bit address (A23-A0) of 000000h, but with the capability to input the Address bits four bits per clock. After which, the Manufacturer ID for Winbond (EFh) and the Device ID are shifted out four bits per clock on the falling edge of CLK with most significant bit (MSB) first as shown in figure 28. The Device ID values for the W25Q16BV is listed in Manufacturer and Device Identification table. If the 24-bit address is initially set to 000001h the Device ID will be read first and then followed by the Manufacturer ID. The Manufacturer and Device IDs can be read continuously, alternating from one to the other. The instruction is completed by driving /CS high.
Figure 28. Read Manufacturer / Device ID Quad I/O Instruction Sequence Diagram
Note:
The “Continuous Read Mode” bits M(7-0) must be set to Fxh to be compatible with Fast Read Quad I/O instruction.
Publication Release Date: March 13, 2009
- 47 - Preliminary - Revision B
W25Q16BV
10.2.30 Read Unique ID Number (4Bh)
The Read Unique ID Number instruction accesses a factory-set read-only -bit number that is unique to each W25Q16BV device. The ID number can be used in conjunction with user software methods to help prevent copying or cloning of a system. The Read Unique ID instruction is initiated by driving the /CS pin low and shifting the instruction code “4Bh” followed by a four bytes of dummy clocks. After which, the -bit ID is shifted out on the falling edge of CLK as shown in figure 29.
24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 101 102 103 Figure 29. Read Unique ID Number Instruction Sequence Diagram
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W25Q16BV
10.2.31 Read JEDEC ID (9Fh)
For compatibility reasons, the W25Q16BV provides several instructions to electronically determine the identity of the device. The Read JEDEC ID instruction is compatible with the JEDEC standard for SPI compatible serial memories that was adopted in 2003. The instruction is initiated by driving the /CS pin low and shifting the instruction code “9Fh”. The JEDEC assigned Manufacturer ID byte for Winbond (EFh) and two Device ID bytes, Memory Type (ID15-ID8) and Capacity (ID7-ID0) are then shifted out on the falling edge of CLK with most significant bit (MSB) first as shown in figure 30. For memory type and capacity values refer to Manufacturer and Device Identification table.
Figure 30. Read JEDEC ID Instruction Sequence Diagram
Publication Release Date: March 13, 2009
- 49 - Preliminary - Revision B
W25Q16BV
10.2.32 Continuous Read Mode Reset (FFh or FFFFh)
For Fast Read Dual/Quad I/O operations, “Continuous Read Mode” Bits (M7-0) are implemented to further reduce instruction overhead. By setting the (M7-0) to “Ax” hex, the next Fast Read Dual/Quad I/O operation does not require the BBh/EBh/E7h/E3h instruction code (See 10.2.13 - 10.2.16 for detail descriptions).
If the system controller is Reset during operation it will likely send a standard SPI instruction, such as Read ID (9Fh) or Fast Read (0Bh), to the W25Q16BV. However, as with most SPI Serial Flash memories, the W25Q16BV does not have a hardware Reset pin, so if Continuous Read Mode bits are set to “Ax” hex, the W25Q16BV will not recognize any standard SPI instructions. To address this possibility, it is recommended to issue a Continuous Read Mode Reset instruction as the first instruction after a system Reset. Doing so will release the Continuous Read Mode from the “Ax” hex state and allow Standard SPI instructions to be recognized. The Continuous Read Mode Reset instruction is shown in figure 31.
Mode Bit Reset for Quad I/OMode Bit Reset for Dual I/O/CSMode 301234567101112131415Mode 3Mode 0CLKIO0IO1IO2IO3Mode 0FFhFFhDon’t CareDon’t CareDon’t CareFigure 31. Continuous Read Mode Reset for Fast Read Dual/Quad I/O
To reset “Continuous Read Mode” during Quad I/O operation, only eight clocks are needed. The instruction is “FFh”. To reset “Continuous Read Mode” during Dual I/O operation, sixteen clocks are needed to shift in instruction “FFFFh”.
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W25Q16BV
11. ELECTRICAL CHARACTERISTICS
11.1 Absolute Maximum Ratings (2)
PARAMETERS SYMBOL CONDITIONS RANGE UNIT (1)
Supply Voltage
Voltage Applied to Any Pin Transient Voltage on any Pin Storage Temperature Lead Temperature
Electrostatic Discharge Voltage
VCC VIO VIOT TSTG VESD
Relative to Ground <20nS Transient
Relative to Ground
Human Body Model(4)
–0.6 to +4.0 –0.6 to VCC+0.4 –2.0V to VCC+2.0V –65 to +150
(3) See Note
V V V °C °C V
TLEAD –2000 to +2000
Notes:
1. Specification for W25Q16BV is preliminary. See preliminary designation at the end of this document. 2. This device has been designed and tested for the specified operation ranges. Proper operation outside
of these levels is not guaranteed. Exposure to absolute maximum ratings may affect device reliability. Exposure beyond absolute maximum ratings may cause permanent damage.
3. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the European directive on restrictions on hazardous substances (RoHS) 2002/95/EU. 4. JEDEC Std JESD22-A114A (C1=100pF, R1=1500 ohms, R2=500 ohms).
11.2 Operating Ranges
PARAMETER SYMBOL CONDITIONS
UNIT MIN MAX SPEC
FR= 80MHz, fR = 50MHz FR= 104MHz, fR = 50MHz
Supply Voltage(1) VCC FR= 50MHz (for E3h command) Ambient Temperature, Operating
Note:
TA
Commercial Industrial
2.7 3.0 3.0 0 –40
3.6 3.6 3.6 +70 +85
V
°C
1. VCC voltage during Read can operate across the min and max range but should not exceed ±10% of the programming (erase/write) voltage.
Publication Release Date: March 13, 2009
- 51 - Preliminary - Revision B
W25Q16BV
11.3 Power-up Timing and Write Inhibit Threshold
SPEC
PARAMETER SYMBOL UNIT
MIN MAX
VCC (min) to /CS Low
Time Delay Before Write Instruction Write Inhibit Threshold Voltage Note:
tVSL(1) tPUW(1) VWI(1)
10 1 1
10 2
µs ms V
1. These parameters are characterized only.
Figure 32. Power-up Timing and Voltage Levels
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W25Q16BV
11.4 DC Electrical Characteristics
PARAMETER SYMBOL CONDITIONS
Input Capacitance Output Capacitance Input Leakage I/O Leakage Standby Current Power-down Current Current Read Data / Dual /Quad 1MHz(2) Current Read Data / Dual /Quad 33MHz(2) Current Read Data / Dual /Quad 50MHz(2) Current Read Data / Dual Output Read/Quad Output Read 80MHz(2) Current Write Status Register
Current Page Program Current Sector/Block Erase
Current Chip Erase Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage
Notes:
1. Tested on sample basis and specified through design and characterization data. TA=25° C, VCC 3V. 2. Checker Board Pattern.
SPEC
UNIT
MIN TYP MAX 6 pF 8 pF ±2 µA ±2 µA 25 50 µA 1 5 µA 4/5/6 6/7.5/9 mA 6/7/8 9/10.5/12 mA 7/8/9 10/12/13.5 mA 10/11/12 15/16.5/18 mA 8 12 mA 20 25 mA 20 25 mA 20 25 mA –0.5 VCC x 0.7 VCC – 0.2
VCC x 0.3 VCC + 0.4
V V V
CIN(1) Cout(1) ILI ILO ICC1 ICC2 ICC3 ICC3 ICC3 ICC3 ICC4 ICC5 ICC6 ICC7 VIL VIH VOL VOH
VIN = 0V(1) VOUT = 0V(1)
/CS = VCC,
VIN = GND or VCC /CS = VCC,
VIN = GND or VCC C = 0.1 VCC / 0.9 VCC DO = Open
C = 0.1 VCC / 0.9 VCC DO = Open
C = 0.1 VCC / 0.9 VCC DO = Open
C = 0.1 VCC / 0.9 VCC DO = Open /CS = VCC /CS = VCC /CS = VCC /CS = VCC
IOL = 1.6 mA IOH = –100 µA
0.4 V Publication Release Date: March 13, 2009
- 53 - Preliminary - Revision B
W25Q16BV
11.5 AC Measurement Conditions
SPEC
PARAMETER SYMBOL UNIT
MIN MAX
Load Capacitance Input Rise and Fall Times Input Pulse Voltages
Input Timing Reference Voltages Output Timing Reference Voltages
Note:
CL 30 pF TR, TF VIN
IN
5 ns V V V
0.2 VCC to 0.8 VCC 0.3 VCC to 0.7 VCC 0.5 VCC to 0.5 VCC
OUT
1. Output Hi-Z is defined as the point where data out is no longer driven.
Figure 33. AC Measurement I/O Waveform
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W25Q16BV
11.6 AC Electrical Characteristics
SPEC
DESCRIPTION SYMBOL ALT UNIT
MIN TYP MAX Clock frequency for all instructions,
except Read Data (03h) & Octal Word Read (E3h) 2.7V-3.6V VCC & Industrial Temperature
Clock frequency for all instructions,
except Read Data (03h) & Octal Word Read (E3h) 3.0V-3.6V VCC & Commercial Temperature Clock frequency for Octal Word Read (E3h) 3.0V-3.6V VCC & Industrial Temperature Clock freq. Read Data instruction (03h) Clock High, Low Time except Read Data (03h) Clock High, Low Time for Read Data (03h) instruction
Clock Rise Time peak to peak Clock Fall Time peak to peak /CS Active Setup Time relative to CLK /CS Not Active Hold Time relative to CLK Data In Setup Time Data In Hold Time
/CS Active Hold Time relative to CLK /CS Not Active Setup Time relative to CLK /CS Deselect Time (for Array Read Array Read / Erase or Program Read Status Registers) Output Disable Time Clock Low to Output Valid 2.7V-3.6V / 3.0V-3.6V
Clock Low to Output Valid (for Read ID instructions) 2.7V-3.6V / 3.0V-3.6V Output Hold Time
FR fC D.C. 80 MHz FR fC D.C. 104 MHz FR fC D.C. 50 MHz fR D.C. 50 MHz tCLL(1) tCRLL(1) tCRLH, tCLH,
4.5 6 ns ns V/ns V/ns
ns tCLCH(2) 0.1 tCHCL(2) 0.1 tSLCH
tCSS 5 tCHSL 5 tDVCH tCHDX
tDSU 1.5
ns
ns ns tDH 4 tCHSH 5 tSHCH 5 tSHSL tSHQZ(2) tCLQV1
tCSH 7/40 tDIS tV1
ns ns 7 6 / 5
ns ns ns
tCLQV2 tCLQX
tV2 8.5 / 7.5 ns tHO 0
ns Continued – next page
Publication Release Date: March 13, 2009
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W25Q16BV
11.7 AC Electrical Characteristics (cont’d)
SPEC
DESCRIPTION SYMBOL ALT UNIT
MIN TYP MAX /HOLD Active Setup Time relative to CLK /HOLD Active Hold Time relative to CLK /HOLD Not Active Setup Time relative to CLK /HOLD Not Active Hold Time relative to CLK /HOLD to Output Low-Z /HOLD to Output High-Z
Write Protect Setup Time Before /CS Low Write Protect Hold Time After /CS High /CS High to Power-down Mode
/CS High to Standby Mode without Electronic Signature Read
/CS High to Standby Mode with Electronic Signature Read
/CS High to next Instruction after Suspend Write Status Register Time Byte Program Time (First Byte) (4)
Additional Byte Program Time (After First Byte) (4) Page Program Time Sector Erase Time (4KB) Block Erase Time (32KB) Block Erase Time (KB) Chip Erase Time
tHLCH 5 tCHHH 5 tHHCH 5 tCHHL 5 tHHQX(2) tHLQZ(2)
tLZ tHZ ns ns ns ns 7 ns 7 ns ns ns tWHSL(3) 20 tSHWL(3) 100 tDP(2) tRES1(2) tRES2(2) tSUS(2) 3 µs 3 µs 1.8 µs 20 µs tW 10 15 ms tBP1 20 50 µs tBP2 2.5 12 µs tPP 0.7 3 ms tSE 30 200 ms tBE1 120 800 ms tBE2 150 1000 ms tCE 3 10 s Notes:
1. Clock high + Clock low must be less than or equal to 1/fC.
2. Value guaranteed by design and/or characterization, not 100% tested in production.
3. Only applicable as a constraint for a Write Status Register instruction when SRP0 is set to 1. 4.
For multiple bytes after first byte within a page, tBPN = tBP1 + tBP2 * N (typical) and tBPN = tBP1 + tBP2 * N (max), where N = number of bytes programmed.
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W25Q16BV
11.8 Serial Output Timing
11.9 Input Timing
11.10 Hold Timing
Publication Release Date: March 13, 2009
- 57 - Preliminary - Revision B
W25Q16BV
12. PACKAGE SPECIFICATION
12.1 8-Pin SOIC 150-mil (Package Code SN)
SYMBOL
MILLIMETERS INCHES MIN TYP. MAX MIN TYP. MAX A 1.47 1.60 1.72 0.058 0.063 0.068 A1 0.10 --- 0.24 0.004 --- 0.009 A2 --- 1.45 --- --- 0.057 --- b 0.33 0.41 0.50 0.013 0.016 0.020 C 0.19 0.20 0.25 0.0075 0.008 0.0098 4.80 4.85 4.95 0.1 0.191 0.195 D(3) E e(2) L
5.80 6.00 6.19 0.228 0.236 0.244 1.27 BSC
0o --- 8o
E1(3) 3.80 3.90 4.00 0.150 0.154 0.157 0.050 BSC 0o --- 8o
0.40 0.71 1.27 0.015 0.028 0.050 CP --- --- 0.10 --- --- 0.004 Notes:
1. Controlling dimensions: inches, unless otherwise specified. 2. BSC = Basic lead spacing between centers.
3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package. 4. Formed leads shall be planar with respect to one another within .0004 inches at the seating plane.
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W25Q16BV
12.2 8-Pin SOIC 208-mil (Package Code SS)
SYMBOL
MILLIMETERS INCHES MIN MAX MIN MAX A 1.75 2.16 0.069 0.085 A1 0.05 0.25 0.002 0.010 A2 1.70 1.91 0.067 0.075 b 0.35 0.48 0.014 0.019 C 0.19 0.25 0.007 0.010 D5.18 5.38 0.204 0.212 E 7.70 8.10 0.303 0.319 E1 5.18 5.38 0.204 0.212 e 1.27 BSC 0.050 BSC L 0.50 0.80 0.020 0.031 ooo0 8 0 8o
y --- 0.10 --- 0.004
Notes:
1. Controlling dimensions: inches, unless otherwise specified. 2. BSC = Basic lead spacing between centers.
3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package. 4. Formed leads shall be planar with respect to one another within .0004 inches at the seating plane.
Publication Release Date: March 13, 2009
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W25Q16BV
12.3 8-Contact 6x5mm WSON (Package Code ZP)
SYMBOL
MILLIMETERS INCHES MIN TYP. MAX MIN TYP. MAX A A1 A3 b D(3) D1 E E1(3) e(2) K L
0.70 0.75 0.80 0.0276 0.0295 0.0315 0.00 0.02 0.05 0.0000 0.0008 0.0019 0.19 .0.20 0.25 0.0075 0.0080 0.0098 0.36 0.40 0.48 0.0138 0.0157 0.0190 5.90 6.00 6.10 0.2320 0.2360 0.2400 3.30 3.40 3.50 0.1299 0.1338 0.1377 4.90 5.00 5.10 0.1930 0.1970 0.2010 4.20 4.30 4.40 0.1653 0.1692 0.1732 1.27 BSC
0.20
0.0500 BSC
0.0080 A2 0.55 0.0126 0.50 0.60 0.75 0.0197 0.0236 0.0295 - 60 -
W25Q16BV
8-Contact 6x5mm WSON Cont’d.
SYMBOL
MILLIMETERS INCHES MIN
TYP.
MAX
MIN
TYP.
MAX
SOLDER PATTERN
M N P Q R
3.40 0.1338 4.30 0.1692 6.00 0.2360 0.50 0.0196 0.75 0.0255
Notes:
1. Advanced Packaging Information; please contact Winbond for the latest minimum and maximum specifications.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package.
4. The metal pad area on the bottom center of the package is connected to the device ground (GND pin). Avoid placement of exposed PCB vias under the pad.
Publication Release Date: March 13, 2009
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W25Q16BV
12.4 16-Pin SOIC 300-mil (Package Code SF)
SYMBOL
MILLIMETERS INCHES MIN MAX MIN MAX A 2.36 2. 0.093 0.104 A1 0.10 0.30 0.004 0.012 b 0.33 0.51 0.013 0.020 C 0.18 0.28 0.007 0.011 D(3)
10.08 10.49 0.397 0.413 E 10.01 10. 0.394 0.419 E1(3) 7.39 7.59 0.291 0.299 e(2)
1.27 BSC 0o
8o
Notes:
1. Controlling dimensions: inches, unless otherwise specified. 2. BSC = Basic lead spacing between centers.
3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package.
0.050 BSC 0o
8o
L 0.39 1.27 0.015 0.050 y --- 0.076 --- 0.003 - 62 -
W25Q16BV
13. ORDERING INFORMATION
(1)
W 25Q xx Vxx(1)
W = Winbond
25Q = SpiFlash Serial Flash Memory with 4KB sectors, Dual/Quad I/O
16B = 16M-bit
V = 2.7V to 3.6V
WSON 6x5mm SN = 8-pin SOIC 150-mil ZP = 8-pad SS = 8-pin SOIC 208-mil SF = 16-pin SOIC 300-mil
I = Industrial (-40°C to +85°C)
(2)
G = Green Package (Lead-free, RoHS Compliant, Halogen-free (TBBA), Antimony-Oxide-free Sb2O3) P = Green Package with Status Register Power Lock-Down & OTP enabled
Notes:
1a. Only the 2 letter is used for the part marking; WSON package type ZP is not used for the part marking. 1b. The “W” prefix is not included on the part marking.
2a. Standard bulk shipments are in Tube (shape E). Please specify alternate packing method, such as Tape and Reel (shape
T) or Tray (shape S), when placing orders. 2b. For shipments with OTP feature enabled, please specify when placing orders.
nd
Publication Release Date: March 13, 2009
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W25Q16BV
13.1 Valid Part Numbers and Top Side Marking
The following table provides the valid part numbers for the W25Q16BV SpiFlash Memory. Please contact Winbond for specific availability by density and package type. Winbond SpiFlash memories use an 11-digit Product Number for ordering. However, due to limited space, the Top Side Marking on all packages use an abbreviated 9-digit number.
PACKAGE TYPE
SN SOIC-8 150mil
SS SOIC-8 208mil
SF SOIC-16 300mil ZP(1) WSON-8 6x5mm Note:
DENSITY 16M-bit 16M-bit 16M-bit 16M-bit
PRODUCT NUMBER W25Q16BVSNIG W25Q16BVSNIP W25Q16BVSSIG W25Q16BVSSIP W25Q16BVSFIG W25Q16BVSFIP W25Q16BVZPIG W25Q16BVZPIP
TOP SIDE MARKING
25Q16BVNIG 25Q16BVNIP 25Q16BVSIG 25Q16BVSIP 25Q16BVFIG 25Q16BVFIP 25Q16BVIG 25Q16BVIP
1. WSON package type ZP is not used in the top side marking.
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W25Q16BV
14. REVISION HISTORY
VERSION DATE PAGE
DESCRIPTION
A 08/24/08 New Create Preliminary Added Erase Suspend Status Bit Removed HPM instruction Updated max. read frequency Updated Ordering Information Added note 2b.
Change Active Current to 4mA Change QE pin to QE Bit
B 02/12/09 13, 14, 17, 51,
55, 63 &
03/09/09 03/11/09 03/13/09
63 5 13
Preliminary Designation
The “Preliminary” designation on a Winbond datasheet indicates that the product is not fully characterized. The specifications are subject to change and are not guaranteed. Winbond or an authorized sales representative should be consulted for current information before using this product.
Trademarks
Winbond and SpiFlash are trademarks of Winbond Electronics Corporation. All other marks are the property of their respective owner.
Important Notice
Winbond products are not designed, intended, authorized or warranted for use as components in systems or equipment intended for surgical implantation, atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, or for other applications intended to support or sustain life. Further more, Winbond products are not intended for applications wherein failure of Winbond products could result or lead to a situation wherein personal injury, death or severe property or environmental damage could occur.
Winbond customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Winbond for any damages resulting from such improper use or sales.
Publication Release Date: March 13, 2009
- 65 - Preliminary - Revision B
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