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BSC750N10ND GOptiMOS®2 Power-TransistorFeatures• Dual N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)• Low on-resistance RDS(on)• Pb-free lead plating; RoHS compliant• Qualified according to JEDEC1) for target applicationProduct SummaryVDSRDS(on),maxID1007513VmΩA• Ideal for high-frequency switching and synchronous rectification• 100% avalanche testedPG-TDSON-8TypeBSC750N10ND GPackagePG-TDSON-8Marking750N10NDMaximum ratings, at Tj=25 °C, unless otherwise specifiedParameterSymbolConditionsValue≤10 secsContinuous drain currentIDVGS=10 V, TC=25 °CVGS=10 V, TC=100 °CVGS=10 V, TA=25 °C3)Pulsed drain current2)Avalanche energy, single pulseID,pulseEASdv/dtVGSPtotTC=25 °CTA=25 °C3)Operating and storage temperatureIEC climatic category; DIN IEC 68-11) Unitsteady state138.5A5.052173.2TC=25 °CID=13 A, RGS=25 ΩID=13 A, VDS=80 V, di/dt=100 A/µs, Tj,max=150 °CmJReverse diode dv/dt6kV/µsGate source voltagePower dissipation±20263.6-55 ... 15055/150/561.5VWTj, Tstg°CJ-STD20 and JESD22Rev. 1.01page 12008-08-14
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BSC750N10ND G
ParameterSymbolConditions
min.
Valuestyp.
max.
Unit
Thermal characteristics
Thermal resistance, junction - caseThermal resistance, junction - ambient, 6 cm² cooling area3)
RthJCRthJA
t≤10 ssteady state
------4.93585
K/W
Electrical characteristics, at Tj=25 °C, unless otherwise specifiedStatic characteristics
Drain-source breakdown voltageGate threshold voltageZero gate voltage drain current
V(BR)DSSVGS=0 V, ID=1 mAVGS(th)IDSS
VDS=VGS, ID=12 µAVDS=100 V, VGS=0 V, Tj=25 °C
VDS=100 V, VGS=0 V, Tj=125 °C
Gate-source leakage currentDrain-source on-state resistanceGate resistanceTransconductance
2)3)
1002-
-30.1
-41
V
µA
----
101620.813
10010075--nAmΩΩS
IGSSRDS(on)RGgfs
VGS=20 V, VDS=0 VVGS=10 V, ID=13 A
|VDS|>2|ID|RDS(on)max, ID=13 A
6.5
See figure 3
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. One transistor active.
Rev. 1.01page 22008-08-14
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BSC750N10ND G
Parameter
SymbolConditions
min.
Dynamic characteristicsInput capacitanceOutput capacitance
Reverse transfer capacitanceTurn-on delay timeRise time
Turn-off delay timeFall time
Gate Charge Characteristics4)Gate to source chargeGate to drain chargeSwitching chargeGate charge totalGate plateau voltageOutput chargeReverse Diode
Diode continuous forward currentDiode pulse currentDiode forward voltageReverse recovery timeReverse recovery charge
4)
Valuestyp.
max.
Unit
CissCossCrsstd(on)trtd(off)tf
VDD=50 V, VGS=10 V, ID=13 A, RG=2.4 ΩVGS=0 V, VDS=50 V, f=1 MHz
-------
5407133
72010012136184
pF
ns
QgsQgdQswQgVplateauQoss
VDD=50 V, VGS=0 VVDD=50 V, ID=13 A, VGS=0 to 10 V
------
324868
43611-10
nC
V
ISIS,pulseVSDtrrQrr
TC=25 °C
VGS=0 V, IF=13 A, Tj=25 °CVR=50 V, IF=IS, diF/dt=100 A/µs
-----
--167114
13521.2
A
Vns
-nC
See figure 16 for gate charge parameter definition
Rev. 1.01page 32008-08-14
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BSC750N10ND G1 Power dissipationPtot=f(TC)2 Drain currentID=f(TC); VGS≥10 V30152512209Ptot [W]15ID [A]63004080120160040801201601050TC [°C]TC [°C]3 Safe operating areaID=f(VDS); TC=25 °C; D=0parameter: tp1021 µslimited by on-stateresistance4 Max. transient thermal impedanceZthJC=f(tp)parameter: D=tp/T100.510 µs10110 ms1100 µs0.20.10.050.020.01single pulse1 ms100ZthJC [K/W]0.10.01DCID [A]10-110-110010110210310-610-510-410-310-210-1100VDS [V]tp [s]Rev. 1.01page 42008-08-14元器件交易网www.cecb2b.comBSC750N10ND G5 Typ. output characteristicsID=f(VDS); Tj=25 °Cparameter: VGS506 Typ. drain-source on resistanceRDS(on)=f(ID); Tj=25 °Cparameter: VGS16010 V140408 V1204.5 VRDS(on) [mΩ]307 V1005 V5.5 V6 VID [A]806.5 V8 V7 V6.5 V206 V6010 V40105.5 V205 V4.5 V001204501020303VDS [V]ID [A]7 Typ. transfer characteristicsID=f(VGS); |VDS|>2|ID|RDS(on)maxparameter: Tj308 Typ. forward transconductancegfs=f(ID); Tj=25 °C2025152015gfs [S]150 °C25 °CID [A]10105500246800102030VGS [V]ID [A]Rev. 1.01page 52008-08-14
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BSC750N10ND G9 Drain-source on-state resistanceRDS(on)=f(Tj); ID=13 A; VGS=10 V10 Typ. gate threshold voltageVGS(th)=f(Tj); VGS=VDS16041403.5120 µA120312 µARDS(on) [mΩ]10098 %2.580VGS(th) [V]100140180260typ1.5401200.50-60-2020600-60-202060100140180Tj [°C]Tj [°C]11 Typ. capacitancesC=f(VDS); VGS=0 V; f=1 MHz12 Forward characteristics of reverse diodeIF=f(VSD)parameter: Tj103100CissCoss10225 °C150 °C, 98%C [pF]IF [A]10Crss10125 °C, 98%150 °C10002040608010.00.51.01.52.0VDS [V]VSD [V]Rev. 1.01page 62008-08-14
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BSC750N10ND G13 Avalanche characteristicsIAS=f(tAV); RGS=25 Ωparameter: Tj(start)10014 Typ. gate chargeVGS=f(Qgate); ID=13 A pulsedparameter: VDD121020 V50 V80 V81025 °CVGS [V]100 °C125 °CIAV [A]21110100100000246810tAV [µs]Qgate [nC]15 Drain-source breakdown voltageVBR(DSS)=f(Tj); ID=1 mA16 Gate charge waveforms115VGSQg110VBR(DSS) [V]105100Vgs(th)95Qg(th)Qgs-60-202060100140180QswQgdQgate90Tj [°C]Rev. 1.01page 72008-08-14
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BSC750N10ND G
Package Outline and Footprint
PG-TDSON-8 dual
Rev. 1.01page 82008-08-14
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BSC750N10ND G
Tape
Dimensions in mm
Rev. 1.01
PG-TDSON-8
page 9
2008-08-14
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Published by
Infineon Technologies AG81726 Munich, Germany
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For further information on technology, delivery terms and conditions and prices, pleasecontact the nearest Infineon Technologies Office (www.infineon.com).Warnings
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Rev. 1.01page 10BSC750N10ND G
2008-08-14
