您好,欢迎来到纷纭教育。
搜索
您的当前位置:首页Charged particle beam writing apparatus and charge

Charged particle beam writing apparatus and charge

来源:纷纭教育
专利内容由知识产权出版社提供

专利名称:Charged particle beam writing apparatus

and charged particle beam writing method

发明人:Yasuo Kato,Jun Yashima申请号:US137665申请日:20121009公开号:US08552405B2公开日:20131008

专利附图:

摘要:A charged particle beam writing apparatus includes a unit to calculate agradient of a convolution amount that is calculated from a convolution operationbetween an area density and a distribution function, a unit to calculate a small influence

radius phenomenon dose correction coefficient that corrects for dimension variation dueto a phenomenon whose influence radius is on an order of microns or less, by using theconvolution amount and the gradient, a unit to calculate a proximity effect dosecorrection coefficient that corrects for dimension variation due to a proximity effect, byusing a first function depending on the small influence radius phenomenon dosecorrection coefficient, a unit to calculate a dose by using the proximity effect dosecorrection coefficient and the small influence radius phenomenon dose correctioncoefficient, and a unit to write a figure pattern concerned on a target object, based onthe dose.

申请人:NuFlare Technology, Inc.

地址:Numazu PA US

国籍:US

代理机构:Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.

更多信息请下载全文后查看

因篇幅问题不能全部显示,请点此查看更多更全内容

Copyright © 2019- fenyunshixun.cn 版权所有 湘ICP备2023022495号-9

违法及侵权请联系:TEL:199 18 7713 E-MAIL:2724546146@qq.com

本站由北京市万商天勤律师事务所王兴未律师提供法律服务