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专利名称：Method of manufacturing fine structures发明人：SCHAEFER, HERBERT,FRANOSCH,
MARTIN,STENGL, REINHARD,LEHMANN,VOLKER,REISINGER, HANS,WENDT,HERMANN
申请号：EP97110326.2申请日：19970624公开号：EP0825638A2公开日：19980225
专利附图：
摘要：The mfg. method provides a fine structure at the surface of a substrate (1,2,3)using a cathodic vapour deposition process, effected with a process gas containing SiH4and GeH4 in a carrier gas, for providing raised areas (4) determining the size of the finestructures. The raised areas act as a mask for an etching or implantation process andhave a mean dia. and mean spacing of the order of between 1 and 100nm.
申请人：SIEMENS AKTIENGESELLSCHAFT
地址：Wittelsbacherplatz 2 80333 München DE
国籍：DE
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