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专利名称：Semiconductor memory device capable of
preventing degradation of memory cells andmethod for erasing the same
发明人：Deung Kak Yoo申请号：US14219811申请日：20140319公开号：US09001586B1公开日：20150407
专利附图：
摘要：A semiconductor memory device according to an embodiment of the presentinvention may include a memory cell array having a plurality of memory cells, a pass
transistor group having normal pass transistors coupled between global word lines andlocal word lines to which the plurality of memory cells are coupled, and an addressdecoder coupled to the global word lines and a block word line to which gates of thenormal pass transistors are coupled in common, wherein the address decoder graduallyincreases a voltage, obtained by subtracting a voltage of the global word lines from avoltage of the block word line, when an erase voltage is provided to a channel of theplurality of memory cells.
申请人：SK Hynix Inc.
地址：Gyeonggi-do JP
国籍：JP
代理机构：IP & T Group LLP
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