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专利名称:Method of manufacturing fine structures发明人:SCHAEFER, HERBERT,FRANOSCH,
MARTIN,STENGL, REINHARD,LEHMANN,VOLKER,REISINGER, HANS,WENDT,HERMANN
申请号:EP97110326.2申请日:19970624公开号:EP0825638B1公开日:20011004
摘要:The mfg. method provides a fine structure at the surface of a substrate (1,2,3)using a cathodic vapour deposition process, effected with a process gas containing SiH4and GeH4 in a carrier gas, for providing raised areas (4) determining the size of the finestructures. The raised areas act as a mask for an etching or implantation process andhave a mean dia. and mean spacing of the order of between 1 and 100nm.
申请人:INFINEON TECHNOLOGIES AG,INFINEON TECHNOLOGIES AG,INFINEONTECHNOLOGIES AG
地址:DE
国籍:DE
代理机构:Zedlitz, Peter, Dipl.-Inf.
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