专利内容由知识产权出版社提供
专利名称：SILICON SINGLE CRYSTAL
MANUFACTURING SYSTEM AND SILICONSINGLE CRYSTAL MANUFACTURINGMETHOD USING THE SYSTEM
发明人：IIDA, MAKOTO,MITAMURA,
NOBUAKI,YANAGIMACHI, TAKAHIRO
申请号：EP07744206申请日：20070528公开号：EP2039811A4公开日：20100303
摘要：The present invention provides a system for manufacturing a silicon singlecrystal which designs manufacturing conditions under which a value of F/G is controlled tofall within a predetermined range in order that a crystal quality of a silicon single crystalmanufactured by a pulling apparatus using the CZ method falls within a target standard,including, automatically, at least: means 1 tentatively designing manufacturing conditionsof a silicon single crystal in a subsequent batch from a crystal quality result of a siliconsingle crystal in a previous batch; means 2 calculating a correction amount from anamount of change in F and/or G due to constituent members of the pulling apparatus inthe subsequent batch; means 3 calculating a correction amount from an amount ofchange in F and/or G due to a manufacturing process in the subsequent batch; and means4 adding the correction amount by the means 2 and/or the means 3 to the manufacturingconditions by the means 1 to calculate manufacturing conditions in the subsequent batch.As a result, there can be provided the system for manufacturing a silicon single crystal
that can more assuredly obtain a silicon single crystal having a desired crystal quality andimprove productivity or a yield and a method for manufacturing a silicon single crystalusing this system.
申请人：SHIN-ETSU HANDOTAI CO., LTD.
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