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专利名称：QUANTUM-WELL-BASED SEMICONDUCTOR
DEVICES
发明人：Gilbert Dewey,Marko Radosavljevic,Ravi
Pillarisetty,Robert S. Chau,Matthew V. Metz
申请号：US13571121申请日：20120809
公开号：US201202958A1公开日：20121129
专利附图：
摘要：Quantum-well-based semiconductor devices and methods of forming quantum-well-based semiconductor devices are described. A method includes providing a hetero-
structure disposed above a substrate and including a quantum-well channel region. Themethod also includes forming a source and drain material region above the quantum-wellchannel region. The method also includes forming a trench in the source and drainmaterial region to provide a source region separated from a drain region. The methodalso includes forming a gate dielectric layer in the trench, between the source and drainregions; and forming a gate electrode in the trench, above the gate dielectric layer.
申请人：Gilbert Dewey,Marko Radosavljevic,Ravi Pillarisetty,Robert S. Chau,Matthew V.Metz
地址：Hillsboro OR US,Beaverton OR US,Portland OR US,Beaverton OR US,PortlandOR US
国籍：US,US,US,US,US
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