AT-41435

Features

•Low Noise Figure:1.7 dB Typical at 2.0␣GHz3.0 dB Typical at 4.0␣GHz•High Associated Gain:14.0 dB Typical at 2.0␣GHz10.0 dB Typical at 4.0␣GHz•High Gain-Bandwidth

Product: 8.0 GHz Typical fT•Cost Effective CeramicMicrostrip Package

Description

Hewlett-Packard’s AT-41435 is ageneral purpose NPN bipolartransistor that offers excellenthigh frequency performance. TheAT-41435 is housed in a costeffective surface mount 100 milmicro-X package. The 4 micronemitter-to-emitter pitch enablesthis transistor to be used in manydifferent functions. The 14 emitter

finger interdigitated geometryyields an intermediate sizedtransistor with impedances thatare easy to match for low noiseand moderate power applications.This device is designed for use inlow noise, wideband amplifier,mixer and oscillator applicationsin the VHF, UHF, and microwavefrequencies. An optimum noisematch near 50 Ω at 1 GHz, makesthis device easy to use as a lownoise amplifier.

The AT-41435 bipolar transistor isfabricated using Hewlett-Packard’s10 GHz fT Self-Aligned-Transistor(SAT) process. The die is nitridepassivated for surface protection.Excellent device uniformity,performance and reliability areproduced by the use of ion-implantation, self-alignmenttechniques, and gold metalizationin the fabrication of this device.4-114

AT-41435

35 micro-X Package

AT-41435 Absolute Maximum Ratings

SymbolVEBOVCBOVCEOICPTTjTSTG

ParameterEmitter-Base VoltageCollector-Base VoltageCollector-Emitter VoltageCollector CurrentPower Dissipation[2,3]Junction TemperatureStorage Temperature[4]UnitsVVVmAmW°C°C

AbsoluteMaximum[1]

1.5201260500200-65 to 200

Thermal Resistance[2,5]:

θjc = 200°C/W

Notes:

1.Permanent damage may occur if any of these limits are exceeded.2.TCASE = 25°C.

3.Derate at 5 mW/°C for TC > 100°C.

4.Storage above +150°C may tarnish the leads of this package making itdifficult to solder into a circuit. After a device has been soldered into acircuit, it may be safely stored up to 200°C.

5.The small spot size of this technique results in a higher, though moreaccurate determination of θjc than do alternate methods. See MEASURE-MENTS section “Thermal Resistance” for more information.

Electrical Specifications, TA = 25°C

Symbol|S21E|2P1 dBG1 dBNFOGA

Parameters and Test Conditions

Insertion Power Gain; VCE = 8 V, IC = 25 mAPower Output @ 1 dB Gain CompressionVCE = 8 V, IC = 25 mA

1 dB Compressed Gain; VCE = 8 V, IC = 25 mAOptimum Noise Figure: VCE = 8 V, IC = 10 mAGain @ NFO; VCE = 8 V, IC = 10 mA

f = 2.0 GHzf = 4.0 GHzf = 2.0 GHzf = 4.0 GHzf = 2.0 GHzf = 4.0 GHzf = 1.0 GHzf = 2.0 GHzf = 4.0 GHzf = 1.0 GHzf = 2.0 GHzf = 4.0 GHz

Units Min.dBdBmdBdB

Typ. Max.11.56.019.018.514.09.51.31.73.018.514.010.08.0

30

150

2700.21.02.0

dB

13.0

GHz—µAµApF

fThFEICBOIEBOCCB

Gain Bandwidth Product: VCE = 8 V, IC = 25 mAForward Current Transfer Ratio; VCE = 8 V, IC = 10 mACollector Cutoff Current; VCB = 8 VEmitter Cutoff Current; VEB = 1 V

Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz

0.2

Note:

1.For this test, the emitter is grounded.

4-115

AT-41435 Typical Performance, TA = 25°C

2424)21mBd( 18GAB20d2.0 GHz 14.0 GHzP)15B16dP121dB( N82.0 GHzIAG9612))BBdd(NF( G1dB50 Ω FB4.0 GHz3Nd82 1NFOG00.51.02.03.04.05.004010203040FREQUENCY (GHz)IC (mA)Figure 1. Noise Figure and Associated Figure 2. Output Power and 1 dB Gain vs. Frequency. Compressed Gain vs. Collector VCE = 8 V, IC = 10mA.Current and Frequency. VCE = 8 V.102.0 GHz)B1435d( N1230IAGG10AMSG4.0 GHz)B25d8( N20IA4.0 GHz6G15MAG)B|S21E|24d(10 NFO2.0 GHzO2FN5000102030400.10.30.51.03.06.0IC (mA)FREQUENCY (GHz)Figure 4. Optimum Noise Figure and Figure 5. Insertion Power Gain, Associated Gain vs. Collector Current Maximum Available Gain and and Frequency. VCE = 8 V.Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 25 mA.4-116

16)B1510 Vd( N146 VI4 VAG13GA1244 V)B6 V3d(10 V OFNF2ON1010203040IC (mA)Figure 3. Optimum Noise Figure and Associated Gain vs. Collector Current and Collector Voltage. f = 2.0 GHz.20161.0 GHz)Bd( N12IA2.0 GHzG|E182S|44.0 GHz0010203040IC (mA)Figure 6. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V.2 AT-41435 Typical Scattering Parameters,

Common Emitter, ZO = 50 Ω, TA=25°C, VCE=8V,IC␣=␣10 mAFreq.S11S21GHzMag.Ang.dBMag.Ang.0.1.80-3228.024.991570.5.50-11021.812.301081.0.40-15216.66.73851.5.38-17613.34.63712.0.3916611.03.54602.5.411569.32.91533.0.441457.92.47433.5.461376.72.15334.0.461275.61.91234.5.4711.71.72135.0.491044.01.5835.5.52913.31.45-76.0.59812.51.34-17

dB

-39.2-29.6-26.2-24.0-21.9-20.4-18.8-17.5-16.0-15.0-13.9-13.0-12.1

S12Mag..011.033.049.063.080.095.115.133.153.178.201.224.247

S22

Ang.82525659586161585350474036

Mag..93.61.51.48.46.44.43.43.45.46.48.47.43

Ang.-12-28-30-32-37-40-48-58-68-75-82--101

AT-41435 Typical Scattering Parameters,

Common Emitter, ZO = 50 Ω, TA=25°C, VCE=8V,IC␣=␣25 mA Freq.S11S21

GHzMag.Ang.dBMag.Ang.

0.1

0.51.01.52.02.53.03.54.04.55.05.56.0

.63.39.36.36.38.40.43.45.46.46.47.51.58

-50-137-17117115614914013212211210179

31.822.917.213.911.59.88.37.26.15.24.43.73.0

39.0813.977.284.943.763.082.612.282.021.821.661.541.41

1469980685852433323144-5-15

dB-40.0-31.4-27.1-23.5-21.6-19.6-18.3-16.8-15.6-14.6-13.7-12.6-11.8

S12Mag..010.027.044.067.083.105.122.144.165.185.207.233.257

Ang.836067666363595550453933

Mag..84.50.45.43.41.39.38.39.40.42.43.42.37

S22

Ang.-18-26-26-30-34-38-47-57-67-75-81--101

A model for this device is available in the DEVICE MODELS section.

AT-41435 Noise Parameters: VCE = 8 V, IC = 10 mA

Freq.GHz0.10.51.02.04.0

NFOdB1.21.21.31.73.0

Γopt

Mag.12.10.05.30.54

Ang31428-154-118

RN/500.170.170.170.160.35

4-117

35 micro-X Package Dimensions

.0852.154EMITTER.083DIA.2.11BASE1COLLECTOR3.020.5082EMITTERNotes:(unless otherwise specified)1. Dimensions are inmm2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .022.56 .455 ± .03011.54 ± .75 .006 ± .002.15 ± .05 .057 ± .0101.45 ± .25.1002.5401-118

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